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参数资料
| 型号： | DS1245Y-85 |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 128K X 8 NON-VOLATILE SRAM MODULE, 85 ns, DMA32 |
| 封装： | 0.740 INCH, EXTENDED MODULE, DIP-32 |
| 文件页数： | 6/13页 |
| 文件大小： | 279K |
| 代理商： | DS1245Y-85 |
DS1245Y/AB
DESCRIPTION
The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as
131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and
control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition
occurs, the lithium energy source is automatically switched on and write protection is unconditionally
enabled to prevent data corruption. DIP-package DS1245 devices can be used in place of existing 128k x
8 static RAMs directly conforming to the popular bytewide 32-pin DIP standard. DS1245 devices in the
PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC
PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write
cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
READ MODE
The DS1245 executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable)
and OE (Output Enable) are active (low). The unique address specified by the 17 address inputs (A0 -
A16) defines which of the 131,072 bytes of data is to be accessed. Valid data will be available to the eight
data output drivers within tACC (Access Time) after the last address input signal is stable, providing that
CE
and OE (Output Enable) access times are also satisfied. If OE and CE access times are not satisfied,
then data access must be measured from the later occurring signal ( CE or OE ) and the limiting parameter
is either tCO for CE or tOE for OE rather than address access.
WRITE MODE
The DS1245 executes a write cycle whenever the WE and CE signals are active (low) after address
inputs are stable. The later occurring falling edge of CE or WE will determine the start of the write cycle.
The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept
valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR)
before another cycle can be initiated. The OE control signal should be kept inactive (high) during write
cycles to avoid bus contention. However, if the output drivers are enabled ( CE and OE active) then WE
will disable the outputs in tODW from its falling edge.
DATA RETENTION MODE
The DS1245AB provides full functional capability for VCC greater than 4.75 volts and write protects by
4.5 volts. The DS1245Y provides full functional capability for VCC greater than 4.5 volts and write-
protects by 4.25 volts. Data is maintained in the absence of VCC without any additional support circuitry.
The nonvolatile static RAMs constantly monitor VCC. Should the supply voltage decay, the NV SRAMs
automatically write-protect themselves, all inputs become “don’t care,” and all outputs become high
impedance. As VCC falls below approximately 3.0 volts, a power switching circuit connects the lithium
energy source to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts,
the power switching circuit connects external VCC to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after VCC exceeds 4.75 volts for the DS1245AB and 4.5 volts for the
DS1245Y.
FRESHNESS SEAL
Each DS1245 device is shipped from Dallas Semiconductor with its lithium energy source disconnected,
guaranteeing full energy capacity. When VCC is first applied at a level greater than 4.25 volts, the lithium
energy source is enabled for battery back-up operation.
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相关PDF资料 |
PDF描述 |
|---|---|
| DS1245Y-70 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32 |
| DS1245AB-120 | 128K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA32 |
| DS1245YP-100 | 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| DS1245ABP-100 | 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| DS1245W-150 | 128K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1245Y-85+ | 功能描述:NVRAM 1024K SRAM Nonvolatile RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1245Y-85-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1245Y-C01 | 功能描述:NVRAM 1024K SRAM Nonvolatile RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1245Y-EMC | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1245Y-FIR | 制造商:Maxim Integrated Products 功能描述: |
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