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| 型号： | DS1248W-120+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 9/19页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 1MBIT 120NS 32DIP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 11 |
| 类型： | Phantom 计时芯片 |
| 特点： | NVSRAM |
| 存储容量： | 128KB |
| 时间格式： | HH:MM:SS:hh（12/24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | 并联 |
| 电源电压： | 2.97 V ~ 3.63 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 32-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 32-EDIP |
| 包装： | 管件 |
DS1248/DS1248P 1024K NV SRAM with Phantom Clock
17 of 19
AC TEST CONDITIONS
Output Load: 50pF + 1TTL Gate
Input Pulse Levels: 0 to 3V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
NOTES:
1) WE is high for a read cycle.
2) OE = VIH or VIL. If CE = VIH during write cycle, the output buffers remain in a high impedance state.
3) tWP is specified as the logical AND of CE and WE. tWP is measured from the latter of CE or WE going
low to the earlier of CE or WE going high.
4) tDH, tDS are measured from the earlier of CE or WE going high.
5) These parameters are sampled with a 50pF load and are not 100% tested.
6) If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle
1, the output buffers remain in a high-impedance state during this period.
7) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
8) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9) The expected tDR is defined as cumulative time in the absence of VCC with the clock oscillator
running.
10) tWR is a function of the latter occurring edge of WE or CE.
11) Voltages are referenced to ground.
12) RST (Pin 1) has an internal pullup resistor.
13) RTC modules can be successfully processed through conventional wave-soldering techniques as long
as temperature exposure to the lithium energy source contained within does not exceed +85°C. Post-
solder cleaning with water-washing techniques is acceptable, provided that ultrasonic vibration is not
used. See the PowerCap package drawing for details regarding the PowerCap package.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1248W-120+ | 功能描述:实时时钟 1024k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1248W-120IND | 功能描述:IC NVSRAM 1MBIT 120NS 32DIP RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| DS1248W-120IND+ | 功能描述:实时时钟 1024k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1248WP-120 | 功能描述:IC NVSRAM 1MBIT 120NS 34PCM RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| DS1248WP-120+ | 功能描述:实时时钟 1024k NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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