参数资料
型号: DS1249Y-85IND
厂商: Maxim Integrated
文件页数: 1/9页
文件大小: 0K
描述: IC NVSRAM 2MBIT 85NS 32DIP
标准包装: 11
格式 - 存储器: RAM
存储器类型: NVSRAM(非易失 SRAM)
存储容量: 2M (256K x 8)
速度: 85ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 32-DIP 模块(0.600",15.24mm)
供应商设备封装: 32-EDIP
包装: 管件
19-5631; Rev 11/10
DS1249Y/AB
2048k Nonvolatile SRAM
www.maxim-ic.com
FEATURES
PIN ASSIGNMENT
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10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times of 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
11
12
32
31
30
29
28
27
26
25
24
23
22
21
V CC
A15
A17
WE
A13
A8
A9
A1 1
OE
A1 0
CE
DQ7
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Full ± 10% V CC operating range (DS1249Y)
Optional ± 5% V CC operating range
(DS1249AB)
Optional industrial temperature range of
-40 ° C to +85 ° C, designated IND
JEDEC standard 32-pin DIP package
DQ0 13 20 DQ6
DQ1 14 19 DQ5
DQ2 15 18 DQ4
GND 16 17 DQ3
32-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
PIN DESCRIPTION
A0 - A17
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
- Chip Enable
CE
- Write Enable
W E
- Output Enable
OE
V CC
- Power (+5V)
GND
- Ground
NC
- No Connect
DESCRIPTION
The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as
262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry
which constantly monitors V CC for an out-of-tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
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