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参数资料
| 型号： | DS1250W-100 |
| 厂商： | Maxim Integrated |
| 文件页数： | 8/9页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 4MBIT 100NS 32DIP |
| 标准包装： | 11 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 4M (512K x 8) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 32-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 32-EDIP |
| 包装： | 管件 |
DS1250W
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9. Each DS1250W has a built-in switch that disconnects the lithium source until V CC is first applied by
the user. The expected t DR is defined as accumulative time in the absence of V CC starting from the
time power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0 ° C to +70 ° C. For industrial products (IND), this range is -40 ° C to
+85 ° C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on V CC .
12. t WR1 and t DH1 are measured from W E going high.
13. t WR2 and t DH2 are measured from CE going high.
14. DS1250 modules are recognized by Underwriters Laboratories (UL) under file E99151.
DC TEST CONDITIONS
Outputs Open
Cycle = 200ns for operating current
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 to 2.7V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
PART
DS1250W-100+
DS1250WP-100+
DS1250W-100IND+
DS1250WP-100IND+
TEMP RANGE
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
SUPPLY
TOLERANCE
3.3V ± 0.3V
3.3V ± 0.3V
3.3V ± 0.3V
3.3V ± 0.3V
PIN-PACKAGE
32 740 EDIP
34 PowerCap*
32 740 EDIP
34 PowerCap*
SPEED
GRADE (ns)
100
100
100
100
+ Denotes a lead(Pb)-free/RoHS-compliant package.
* DS9034PC+ or DS9034PCI+ (PowerCap) required. Must be ordered separately.
PACKAGE INFORMATION
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages . Note that a “+”,
“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix
character, but the drawing pertains to the package regardless of RoHS status.
PACKAGE TYPE
32 EDIP
34 PCAP
PACKAGE CODE
MDT32+6
PC2+5
OUTLINE NO.
21-0245
21-0246
LAND PATTERN NO.
—
—
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1250W-100+ | 功能描述:NVRAM 3.3V 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1250W-100IND | 功能描述:NVRAM 3.3V 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1250W-100IND+ | 功能描述:NVRAM 3.3V 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1250W-150 | 功能描述:NVRAM 3.3V 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1250W-150+ | 功能描述:NVRAM 3.3V 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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