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参数资料
| 型号： | DS1250YP-70 |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| 封装： | POWERCAP MODULE-34 |
| 文件页数： | 6/12页 |
| 文件大小： | 294K |
| 代理商： | DS1250YP-70 |
DS1250Y/AB
3 of 12
PACKAGES
The DS1250 is available in two packages: 32-pin DIP and 34-pin PowerCap Module (PCM). The 32-pin
DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a single
package with a JEDEC-standard 600-mil DIP pinout. The 34-pin PowerCap Module integrates SRAM
memory and nonvolatile control into a module base along with contacts for connection to the lithium
battery in the DS9034PC PowerCap. The PowerCap Module package design allows a DS1250 PCM
device to be surface mounted without subjecting its lithium backup battery to destructive high-
temperature reflow soldering. After a DS1250 PCM module base is reflow soldered, a DS9034PC
PowerCap is snapped on top of the PCM to form a complete Nonvolatile SRAM module. The DS9034PC
is keyed to prevent improper attachment. DS1250 module bases and DS9034PC PowerCaps are ordered
separately and shipped in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +6.0V
Operating Temperature
0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature
DIP Module
+260°C for 10 seconds
Caution: Do Not Reflow
(Wave or Hand Solder Only)
PowerCap Module
See IPC/JEDEC J-STD-020
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
DS1250AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1250Y Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
+0.8
V
DC ELECTRICAL
(VCC=5V ± 5% for DS1250AB)
CHARACTERISTICS
(tA: See Note 10) (VCC=5V ± 10% for DS1250Y)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
μA
I/O Leakage Current CE
≥ VIH ≤ VCC
IIO
-1.0
+1.0
μA
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE =2.2V
ICCS1
200
600
μA
Standby Current CE =VCC-0.5V
ICCS2
50
150
μA
Operating Current
ICCO1
85
mA
Write Protection Voltage (DS1250AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1250Y)
VTP
4.25
4.37
4.5
V
相关PDF资料 |
PDF描述 |
|---|---|
| DS1250ABP-100 | 512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| DS1250AB-70 | 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32 |
| DS1250YL-70-IND | 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1254W | 0 TIMER(S), REAL TIME CLOCK, PBGA168 |
| DS1254Y | 0 TIMER(S), REAL TIME CLOCK, PBGA168 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1250YP-70+ | 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1250YP-70IND | 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1250YP-70-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM |
| DS1250YP-70IND+ | 功能描述:NVRAM 4096K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1251 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k NV SRAM with Phantom Clock |
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