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参数资料
| 型号： | DS1258AB-100 |
| 厂商： | Maxim Integrated |
| 文件页数： | 7/8页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 2MBIT 100NS 40DIP |
| 标准包装： | 9 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 2M (128K x 16) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 40-DIP 模块（0.610"，15.495mm） |
| 供应商设备封装： | 40-EDIP |
| 包装： | 管件 |
DS1258Y/AB
8) If WE is low or the WE low transition occurs prior to or simultaneously with the CEU or CEL low
transition, the output buffers remain in a high impedance state during this period.
9) Each DS1258 has a built-in switch that disconnects the lithium source until the user first applies V CC .
The expected t DR is defined as accumulative time in the absence of V CC starting from the time power
is first applied by the user. This parameter is assured by component selection, process control, and
design. It is not measured directly during production testing.
10) All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0 ° C to +70 ° C. For industrial products, this range is -40 ° C to
+85 ° C.
11) In a power-down condition the voltage on any pin may not exceed the voltage on V CC .
12) t WR1 , t DH1 are measured from WE going high.
13) t WR2 , t DH2 are measured from CEU OR CEL going high.
14) DS1258 DIP modules are recognized by Underwriters Laboratory (U.L. ? ) under file E99151.
DC TEST CONDITIONS
Outputs Open
Cycle = 200ns
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels:
0.0V to 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
Part Number
Temperature Range
Supply
Tolerance
Pin/Package
Speed Grade
DS1258AB-70 0°C to +70°C
DS1258AB-70# 0°C to +70°C
DS1258AB-70IND -40°C to +85°C
DS1258AB-70IND# -40°C to +85°C
DS1258AB-100 0°C to +70°C
DS1258AB-100# 0°C to +70°C
DS1258Y-70 0°C to +70°C
DS1258Y-70# 0°C to +70°C
DS1258Y-70IND -40°C to +85°C
DS1258Y-70IND# -40°C to +85°C
DS1258Y-100 0°C to +70°C
DS1258Y-100# 0°C to +70°C
# Denotes RoHS-compliant product.
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 5%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
5V ± 10%
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
40 / 740 EMOD
70ns
70ns
70ns
70ns
100ns
100ns
70ns
70ns
70ns
70ns
100ns
100ns
* DS9034PC or DS9034PCI (PowerCap) required. Must be ordered separately.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258AB-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258AB-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258AB-70 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258AB-70# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258AB-70IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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