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参数资料
| 型号： | DS1258W-150# |
| 厂商： | Maxim Integrated |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 2MBIT 150NS 40DIP |
| 标准包装： | 9 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 2M (128K x 16) |
| 速度： | 150ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 40-DIP 模块（0.610"，15.495mm） |
| 供应商设备封装： | 40-EDIP |
| 包装： | 盒 |
DS1258W
3.3V 128k x 16 Nonvolatile
www.maxim-ic.com
SRAM
FEATURES
§ 10-Year Minimum Data Retention in the
Absence of External Power
§ Data is Automatically Protected During a
Power Loss
§ Separate Upper Byte and Lower Byte Chip
Select Inputs
§ Unlimited Write Cycles
§ Low-Power CMOS
§ Read and Write Access Times as Fast as
100ns
§ Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
§ Optional Industrial Temperature Range of
-40 ° C to +85 ° C, Designated IND
PIN ASSIGNMENT
CEU 1
CEL 2
DQ15 3
DQ14 4
DQ13 5
DQ12 6
DQ11 7
DQ10 8
DQ9 9
DQ8 10
GND 11
DQ7 12
DQ6 13
DQ5 14
DQ4 15
DQ3 16
DQ2 17
DQ1 18
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
V CC
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A7
A6
A5
A4
A3
A2
DQ0
OE
19
20
22
21
A1
A0
40-Pin Encapsulated Package
740mil Extended
PIN DESCRIPTION
A0 - A16
DQ0 - DQ15
CEU
CE L
W E
OE
V CC
GND
- Address Inputs
- Data In/Data Out
- Chip Enable Upper Byte
- Chip Enable Lower Byte
- Write Enable
- Output Enable
- Power (+3.3V)
- Ground
DESCRIPTION
The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV)
SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy
source and control circuitry, which constantly monitors V CC for an out-of-tolerance condition. When such
a condition occurs, the lithium energy source is automatically switched on and write protection is
unconditionally enabled to prevent data corruption. DIP-package DS1258W devices can be used in place
of solutions which build nonvolatile 128k x 16 memory by utilizing a variety of discrete components.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is
required for microprocessor interfacing.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258W-150# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-150-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-100 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-150 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
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