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参数资料
| 型号： | DS1258W-150 |
| 英文描述： | 3.3V 128k x 16 Nonvolatile |
| 中文描述： | 3.3 128K的× 16非易失 |
| 文件页数： | 1/8页 |
| 文件大小： | 174K |
| 代理商： | DS1258W-150 |
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033104
FEATURES
10-Year Minimum Data Retention in the
Absence of External Power
Data is Automatically Protected During a
Power Loss
Separate Upper Byte and Lower Byte Chip-
Select Inputs
Unlimited Write Cycles
Low-Power CMOS
Read and Write Access Times as Fast as 70ns
Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
Full 10% Operating Range (DS1258Y)
Optional 5% Operating Range (DS1258AB)
Optional Industrial Temperature Range of
-40 C to +85 C, Designated IND
PIN ASSIGNMENT
PIN DESCRIPTION
A0 to A16
DQ0 to DQ15
CEU
CEL
WE
OE
V
CC
GND
- Address Inputs
- Data In/Data Out
- Chip Enable Upper Byte
- Chip Enable Lower Byte
- Write Enable
- Output Enable
- Power (+5V)
- Ground
DESCRIPTION
The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as
131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. DIP-package DS1258 devices can be used in place of solutions that build NV
128k x 16 memory by utilizing a variety of discrete components. There is no limit on the number of write
cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.
DS1258Y/AB
128k x 16 Nonvolatile SRAM
www.maxim-ic.com
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16
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1
2
3
4
5
6
7
8
9
10
11
12
39
38
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35
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28
40-Pin Encapsulated Package
740mil Extended
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ6
DQ5
DQ4
DQ3
V
CC
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A7
A6
A5
A4
40
27
26
25
CEL
CEU
DQ1
DQ0
OE
DQ2
A2
A1
A0
A3
23
22
21
24
相关PDF资料 |
PDF描述 |
|---|---|
| DS1258WP-100 | 3.3V 128k x 16 Nonvolatile |
| DS1258WP-150 | CONNECTOR ACCESSORY |
| DS1258Y-100 | 128k x 16 Nonvolatile SRAM |
| DS1258Y-100-IND | 128k x 16 Nonvolatile SRAM |
| DS1258Y | 128k x 16 Nonvolatile SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258W-150# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-150-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-100 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258WP-150 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
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