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参数资料
| 型号： | DS1258WP-150 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 连接器附件 |
| 文件页数： | 6/8页 |
| 文件大小： | 174K |
| 代理商： | DS1258WP-150 |
DS1258Y/AB
6 of 8
POWER-DOWN/POWER-UP CONDITION
POWER-DOWN/POWER-UP TIMING
(t
A
: See Note 10)
PARAMETER
SYMBOL
t
PD
V
CC
slew from V
TP
to 0V
t
F
V
CC
slew from 0V to V
TP
t
R
t
REC
(t
A
=+25 C)
PARAMETER
SYMBOL
Expected Data Retention Time
t
DR
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1)
WE
is high for a Read Cycle.
2)
OE
= V
IH
or V
IL
. If
OE
= V
IH
during write cycle, the output buffers remain in a high impedance state.
3) t
WP
is specified as the logical AND of
CEU
or
CEL
and
WE
. t
WP
is measured from the latter of
CEU
,
CEL
or
WE
going low to the earlier of
CEU
,
CEL
or
WE
going high.
4) t
DS
is measured from the earlier of
CEU
or
CEL
or
WE
going high.
5) These parameters are sampled with a 5pF load and are not 100% tested.
6) If the
CEU
or
CEL
low transition occurs simultaneously with or later than the
WE
low transition in
the output buffers remain in a high impedance state during this period.
7) If the
CEU
or
CEL
high transition occurs prior to or simultaneously with the
WE
high transition, the
output buffers remain in high impedance state during this period.
MIN
0
TYP
MAX
UNITS NOTES
s
CEU
,
CEL
at V
IH
before Power-Down
11
300
300
2
s
s
CEU
,
CEL
at V
IH
after Power-Up
125
ms
MIN
10
TYP
MAX
UNITS NOTES
years
9
相关PDF资料 |
PDF描述 |
|---|---|
| DS1258Y-100 | 128k x 16 Nonvolatile SRAM |
| DS1258Y-100-IND | 128k x 16 Nonvolatile SRAM |
| DS1258Y | 128k x 16 Nonvolatile SRAM |
| DS1259 | Battery Manager Chip |
| DS12CR887 | RTC with Constant-Voltage Trickle Charger |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258WP-150-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258Y | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y/AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K x 16 Nonvolatile SRAM |
| DS1258Y-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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