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参数资料
| 型号： | DS1258Y-100 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Static RAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 100 ns, DIP40 |
| 封装： | 0.740 INCH, EXTENDED MODULE, DIP-40 |
| 文件页数： | 1/8页 |
| 文件大小： | 156K |
| 代理商： | DS1258Y-100 |
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FEATURES
10-year minimum data retention in the
absence of external power
Data is automatically protected during a
power loss
Separate upper byte and lower byte chip
select inputs
Unlimited write cycles
Low-power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full
±10% operating range (DS1258Y)
Optional
±5% operating range (DS1258AB)
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A16
- Address Inputs
DQ0 - DQ15
- Data In/Data Out
CEU
- Chip Enable Upper Byte
CEL
- Chip Enable Lower Byte
WE
- Write Enable
OE
- Output Enable
VCC
- Power (+5V)
GND
- Ground
DESCRIPTION
The DS1258 128k x 16 Nonvolatile SRAMs are 2,097,152-bit fully static, nonvolatile SRAMs, organized
as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. DIP-package DS1258 devices can be used in place of solutions which build
nonvolatile 128k x 16 memory by utilizing a variety of discrete components. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
DS1258Y/AB
128k x 16 Nonvolatile SRAM
www.dalsemi.com
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39
40-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
DQ15
DQ13
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ5
DQ6
VCC
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
A8
A6
A7
40
38
37
36
35
34
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31
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29
27
28
CEL
DQ14
DQ12
CEU
DQ4
DQ3
15
16
26
25
A5
A4
17
18
DQ1
DQ2
A2
A3
23
24
DQ0
OE
19
20
22
21
A1
A0
相关PDF资料 |
PDF描述 |
|---|---|
| DS1265AB-100 | 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA36 |
| DS1265Y-70 | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA36 |
| DS1265AB | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1265Y | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| DS1265Y-100 | 1M X 8 NON-VOLATILE SRAM MODULE, 100 ns, DIP36 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y-70 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-70# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-70IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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