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| 型号： | DS1258Y-70# |
| 厂商： | Maxim Integrated |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 2MBIT 70NS 40DIP |
| 标准包装： | 9 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 2M (128K x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 40-DIP 模块（0.610"，15.495mm） |
| 供应商设备封装： | 40-EDIP |
| 包装： | 盒 |
DS1258Y/AB
POWER-DOWN/POWER-UP CONDITION
POWER-DOWN/POWER-UP TIMING
(t A : See Note 10)
CEU , CEL
PARAMETER
at V IH before Power-Down
SYMBOL
t PD
MIN
0
TYP
MAX
UNITS
m s
NOTES
11
V CC slew from V TP to 0V
V CC slew from 0V to V TP
t F
t R
300
300
m s
m s
CEU , CEL
at V IH after Power-Up
t REC
2
125
ms
(t A =+25 ° C)
PARAMETER
Expected Data Retention Time
SYMBOL
t DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1) WE is high for a Read Cycle.
2) OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high impedance state.
3) t WP is specified as the logical AND of CEU or CEL and WE . t WP is measured from the latter of CEU ,
CEL or WE going low to the earlier of CEU , CEL or WE going high.
4) t DS is measured from the earlier of CEU or CEL or WE going high.
5) These parameters are sampled with a 5pF load and are not 100% tested.
6) If the CEU or CEL low transition occurs simultaneously with or later than the WE low transition in
the output buffers remain in a high impedance state during this period.
7) If the CEU or CEL high transition occurs prior to or simultaneously with the WE high transition, the
output buffers remain in high impedance state during this period.
6 of 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258Y-70# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-70IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-70-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y-70IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1259 | 功能描述:电池管理 RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
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