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参数资料
| 型号： | DS1258Y |
| 英文描述： | 128k x 16 Nonvolatile SRAM |
| 中文描述： | 128k x 16非易失SRAM |
| 文件页数： | 7/8页 |
| 文件大小： | 174K |
| 代理商： | DS1258Y |
DS1258Y/AB
7 of 8
8) If
WE
is low or the
WE
low transition occurs prior to or simultaneously with the
CEU
or
CEL
low
transition, the output buffers remain in a high impedance state during this period.
9) Each DS1258 has a built-in switch that disconnects the lithium source until the user first applies V
CC
.
The expected t
DR
is defined as accumulative time in the absence of V
CC
starting from the time power
is first applied by the user. This parameter is assured by component selection, process control, and
design. It is not measured directly during production testing.
10) All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0 C to +70 C. For industrial products, this range is -40 C to
+85 C.
11) In a power-down condition the voltage on any pin may not exceed the voltage on V
CC
.
12) t
WR1
, t
DH1
are measured from
WE
going high.
13) t
WR2
, t
DH2
are measured from
CEU
OR
CEL
going high.
14) DS1258 DIP modules are recognized by Underwriters Laboratory (U.L.
) under file E99151.
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100 pF + 1TTL Gate
Cycle = 200ns
Input Pulse Levels:
All voltages are referenced to ground
Timing Measurement Reference Levels
Input pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
DS1258 TTP - SSS - III
0.0V to 3.0V
Input: 1.5V
Output: 1.5V
Operating Temperature Range
blank: 0 C to 70 C
IND: -40 C to +85 C
Access Speed
70:
100:
70ns
100ns
Package Type
blank: 40-pin (600mil) DIP
V
CC
Tolerance
AB:
Y:
5%
10%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258Y/AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K x 16 Nonvolatile SRAM |
| DS1258Y-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y-70 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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