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参数资料
| 型号： | DS1270AB-70 |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDMA36 |
| 封装： | 0.740 INCH, DIP-36 |
| 文件页数： | 2/8页 |
| 文件大小： | 193K |
| 代理商： | DS1270AB-70 |
DS1270Y/AB
2 of 8
READ MODE
The DS1270 devices execute a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip
Enable) and OE (Output Enable) are active (low). The unique address specified by the 21 address inputs
(A0 - A20) defines which of the 2,097,152 bytes of data is accessed. Valid data will be available to the
eight data output drivers within tACC (Access Time) after the last address input signal is stable, providing
that CE and OE (Output Enable) access times are also satisfied. If OE and CE access times are not
satisfied, then data access must be measured from the later-occurring signal ( CE or OE ) and the limiting
parameter is either tCO for CE or tOE for OE rather than tACC.
WRITE MODE
The DS1270 devices execute a write cycle whenever WE and CE signals are active (low) after address
inputs are stable. The later-occurring falling edge of CE or WE will determine the start of the write cycle.
The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be kept
valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR)
before another cycle can be initiated. The OE control signal should be kept inactive (high) during write
cycles to avoid bus contention. However, if the output drivers are enabled ( CE and OE active) then WE
will disable the outputs in tODW from its falling edge.
DATA RETENTION MODE
The DS1270AB provides full-functional capability for VCC greater than 4.75 volts and write protects by
4.5 volts. The DS1270Y provides full-functional capability for VCC greater than 4.5 volts and write
protects by 4.25 volts. Data is maintained in the absence of VCC without any additional support circuitry.
The nonvolatile static RAMs constantly monitor VCC. Should the supply voltage decay, the NV SRAMs
automatically write protect themselves, all inputs become don’t care, and all outputs become high-
impedance. As VCC falls below approximately 3.0 volts, a power switching circuit connects the lithium
energy source to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts,
the power switching circuit connects external VCC to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after VCC exceeds 4.75 volts for the DS1270AB and 4.5 volts for the
DS1270Y.
FRESHNESS SEAL
Each DS1270 device is shipped from Dallas Semiconductor with its lithium energy source disconnected,
guaranteeing full energy capacity. When VCC is first applied at a level greater than VTP, the lithium
energy source is enabled for battery backup operation.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1284Q | 1 TIMER(S), REAL TIME CLOCK, PQCC28 |
| DS12885Q | 1 TIMER(S), REAL TIME CLOCK, PQCC28 |
| DS1330AB | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1330Y | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1330W | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1270AB-70# | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1270AB-70IND | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1270AB-70IND# | 功能描述:NVRAM 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1270W-100 | 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1270W-100# | 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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