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参数资料
| 型号： | DS1270W |
| 厂商： | Maxim Integrated Products, Inc. |
| 英文描述： | 3.3V 16Mb Nonvolatile SRAM |
| 中文描述： | 3.3V、16Mb非易失SRAM |
| 文件页数： | 1/8页 |
| 文件大小： | 156K |
| 代理商： | DS1270W |
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FEATURES
Five years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Unlimited write cycles
Low-power CMOS operation
Read and write access times as fast as 100ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Optional industrial (IND) temperature range
of -40 C to +85 C
PIN ASSIGNMENT
PIN DESCRIPTION
A0–A20
DQ0–DQ7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+3.3V)
- Ground
- No Connect
DESCRIPTION
The DS1270W 16Mb nonvolatile (NV) SRAMs are 16,777,216-bit, fully static, NV SRAMs organized as
2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles that can be executed, and no
additional support circuitry is required for microprocessor interfacing.
DS1270W
3.3V 16Mb Nonvolatile SRAM
www.maxim-ic.com
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35
34
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36-Pin Encapsulated Package
740mil Extended
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
V
CC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
36
23
22
21
A20
NC
DQ0
DQ1
GND
DQ2
DQ3
DQ4
19
20
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1270W-100 | 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1270W-100# | 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1270W-100IND | 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1270W-100IND# | 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1270W-150 | 功能描述:NVRAM 3.3V 16M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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