参数资料
型号: DS1312S-2+
厂商: Maxim Integrated
文件页数: 2/12页
文件大小: 0K
描述: IC CTRLR NV W/BATT MOD 8-SOIC
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 100
控制器类型: 非易失性 RAM
电源电压: 4.75 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
DS1312
10 of 12
NOTES:
2. All voltages referenced to ground.
3. Measured with outputs open circuited.
4. ICCO1 is the maximum average load which the DS1312 can supply to attached memories at VCCO >
VCCI -0.2V.
5. ICCO1 is the maximum average load which the DS1312 can supply to attached memories at VCCO >
VCCI -0.3V.
6. All inputs within 0.3V of ground or VCCI.
7. ICCO2 is the maximum average load current which the DS1312 can supply to the memories in the
battery backup mode.
8. Measured with a load as shown in Figure 2.
9. Chip Enable Output CEO can only sustain leakage current in the battery backup mode.
10. CEO will be held high for a time equal to tREC after VCCI crosses VCCTP on power-up.
11. BW and RST are open-drain outputs and, as such, cannot source current. External pull-up resistors
should be connected to these pins for proper operation. Both BW and RST can sink 10 mA.
12. tCE maximum must be met to ensure data integrity on power-down.
13. In battery-backup mode, inputs must never be below ground or above VCCO.
14. The DS1312 is recognized by Underwriters Laboratories (UL) under file E99151.
DC TEST CONDITIONS
Outputs Open
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: See below
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
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