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参数资料
| 型号： | DS1312S-2/T&R |
| 厂商： | Maxim Integrated |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC CONTROLLER NV BW/RST 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 控制器类型： | 非易失性 RAM |
| 电源电压： | 4.75 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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FEATURES
Converts CMOS SRAM into nonvolatile
memory
Unconditionally write-protects SRAM when
VCC is out of tolerance
Automatically switches to battery backup
supply when VCC power failure occurs
Monitors voltage of a lithium cell and
provides advanced warning of impending
battery failure
Signals low-battery condition on active low
Battery Warning output signal
Optional 5% or 10% power-fail detection
Space-saving 8-pin DIP and SOIC packages
Optional 16-pin SOIC and 20-pin TSSOP
versions reset processor when power failure
occurs and hold processor in reset during
system power-up
Industrial temperature range of -40°C to
+85°C
PIN ASSIGNMENT
PIN DESCRIPTION
VCCI
- +5V Power Supply Input
VCCO
- SRAM Power Supply Output
VBAT
- Backup Battery Input
CEI
- Chip Enable Input
CEO
- Chip Enable Output
TOL
- VCC Tolerance Select
BW
- Battery Warning Output
(Open Drain)
RST
- Reset Output (Open Drain)
GND
- Ground
NC
- No Connection
DESCRIPTION
The DS1312 Nonvolatile Controller with Battery Monitor is a CMOS circuit which solves the application
problem of converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-
of-tolerance condition. When such a condition is detected, chip enable is inhibited to accomplish write
protection and the battery is switched on to supply the RAM with uninterrupted power. Special circuitry
uses a low-leakage CMOS process which affords precise voltage detection at extremely low battery
consumption.
1
2
3
4
20
19
18
17
5
6
7
8
9
10
11
12
13
14
15
16
NC
VCCI
RST
NC
BW
NC
CEO
NC
CEI
NC
VCCO
NC
VBAT
NC
TOL
NC
GND
DS1312E 20-Pin TSSOP
1
2
3
4
8
7
6
5
GND
TOL
VBAT
VCCO
VCCI
BW
CEO
CEI
DS1312S-2 8-Pin SOIC
(150 mils)
1
2
3
4
8
7
6
5
GND
TOL
VBAT
VCCO
VCCI
BW
CEO
CEI
DS1312 8-Pin DIP
(300 mils)
1
2
3
4
16
15
14
13
5
6
7
8
9
10
11
12
NC
VCCO
NC
VBAT
NC
TOL
NC
GND
NC
VCCI
RST
NC
BW
CEO
NC
CEI
DS1312S 16-Pin SOIC
(300 mils)
DS1312
Nonvolatile Controller with Lithium Battery Monitor
19-6306; Rev 6/12
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| DS1314 | 功能描述:IC CTRLR NV W/BATT MON 3V 8-DIP RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1314_05 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3V Nonvolatile Controller with Lithium Battery Monitor |
| DS1314+ | 功能描述:IC CTRLR NV W/BATT MON 8-DIP RoHS:是 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
| DS1314E | 功能描述:IC CTRL NV W/BATT MON 3V 20TSSOP RoHS:否 类别:集成电路 (IC) >> 存储器 - 控制器 系列:- 标准包装:45 系列:- 控制器类型:静态 RAM（SRAM） 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 封装/外壳:16-SOIC（0.295"，7.50mm 宽） 供应商设备封装:16-SOIC W 包装:管件 |
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