参数资料
型号: DS1315E-5+
厂商: Maxim Integrated Products
文件页数: 10/21页
文件大小: 0K
描述: IC TIME CHIP PHANTOM 5V 20-TSSOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 74
类型: Phantom 计时芯片
特点: 闰年
时间格式: HH:MM:SS:hh(12/24 小时)
数据格式: YY-MM-DD-dd
接口: 并联
电源电压: 4.5 V ~ 5.5 V
电压 - 电源,电池: 2.5 V ~ 3.7 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 20-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 20-TSSOP
包装: 管件
产品目录页面: 1433 (CN2011-ZH PDF)
DS1315 Phantom Time Chip
18 of 21
NOTES:
1) All voltages are referenced to ground.
2) Measured with load shown in Figure 15.
3) Input pulse rise and fall times equal 10ns.
4) tWR is a function of the latter occurring edge of WE or CE in RAM mode, or OE or CE in ROM
mode.
5) tDH and tDS are functions of the first occurring edge of WE or CE in RAM mode, or OE or CE in
ROM mode.
6) Measured without RAM connected.
7) ICCO1 is the maximum average load current the DS1315 can supply to external memory.
8) Applies to CEO with the ROM/ RAM pin grounded. When the ROM/ RAM pin is connected to VCCO,
CEO
will go to a low level as VCCI falls below VBAT.
9) ICCO2 is the maximum average load current that the DS1315 can supply to memory in the battery
backup mode.
10) Applies to all input pins except RST . RST is pulled internally to VCCI.
11) See Figures 11 and 12.
12) See Figures 13 and 14.
13) VSW is determined by the larger of VBAT1 and VBAT2.
14) VSW is determined by the smaller of VBAT1, VBAT2, and VPF.
Figure 13. 3.3V Power-Up Condition
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