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| 型号： | DS1330ABP-70+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 256KBIT 70NS 34PCM |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 40 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 256K (32K x 8) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 34-PowerCap? 模块 |
| 供应商设备封装： | 34-PowerCap 模块 |
| 包装： | 管件 |
DS1330Y/AB
POWER-DOWN/POWER-UP TIMING
(T A : See Note 10)
PARAMETER
V CC Fail Detect to CE and WE Inactive
SYMBOL
t PD
MIN
TYP
MAX
1.5
UNITS
μ s
NOTES
11
V CC slew from V TP to 0V
t F
150
μ s
V CC Fail Detect to RST Active
V CC slew from 0V to V TP
V CC Valid to CE and WE Inactive
V CC Valid to End of Write Protection
t RPD
t R
t PU
t REC
150
15
2
125
μ s
μ s
ms
ms
14
V CC Valid to RST Inactive
V CC Valid to BW Valid
t RPU
t BPU
150
200
350
1
ms
s
14
14
BATTERY WARNING TIMING
(T A : See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Battery Test Cycle
Battery Test Pulse Width
Battery Test to BW Active
t BTC
t BTPW
t BW
24
1
1
hr
s
s
(T A = +25 ° C)
PARAMETER
Expected Data Retention Time
SYMBOL
t DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1. WE is high for a Read Cycle.
2. OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high-impedance state.
3. t WP is specified as the logical AND of CE and WE . t WP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. t DS is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output
buffers remain in a high-impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in high-impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
8 of 10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1330ABP-70+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1330ABP-70IND | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1330ABP-70-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330ABP-70IND+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1330BL-100 | 功能描述:IC NVSRAM 256KBIT 100NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
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