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参数资料
| 型号： | DS1330ABP-70 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Static RAM |
| 英文描述： | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| 封装： | POWERCAP MODULE-34 |
| 文件页数： | 1/11页 |
| 文件大小： | 218K |
| 代理商： | DS1330ABP-70 |
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FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power loss
Power supply monitor resets processor when
VCC power loss occurs and holds processor in
reset during VCC ramp-up
Battery monitor checks remaining capacity
daily
Read and write access times as fast as 70 ns
Unlimited write cycle endurance
Typical standby current 50
A
Upgrade for 32k x 8 SRAM, EEPROM or
Flash
Lithium battery is electrically disconnected to
retain freshness until power is applied for the
first time
Full
±10% V
CC operating range (DS1330Y)
or optional
±5% V
CC operating range
(DS1330AB)
Optional industrial temperature range of
-40
°C to +85°C, designated IND
New PowerCap Module (PCM) package
Directly surface-mountable module
Replaceable snap-on PowerCap provides
lithium backup battery
Standardized pinout for all nonvolatile SRAM
products
Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
RST
- Reset Output
BW
- Battery Warning
VCC
- Power (+5V)
GND
- Ground
NC
- No Connect
DESCRIPTION
The DS1330 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as
32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry
which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. Additionally, the DS1330 devices have dedicated circuitry for monitoring the
status of VCC and the status of the internal lithium battery. DS1330 devices in the PowerCap Module
package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a
complete Nonvolatile SRAM module. The devices can be used in place of 32K x 8 SRAM, EEPROM or
Flash components.
DS1330Y/AB
256k Nonvolatile SRAM
www.dalsemi.com
1
BW
2
3
NC
RST
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
4
5
6
7
8
9
10
11
12
13
14
15
16
17
NC
A14
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34
NC
GND
VBAT
34-Pin POWERCAP MODULE (PCM)
(USES DS9034PC POWERCAP)
相关PDF资料 |
PDF描述 |
|---|---|
| DS1330WP-150 | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34 |
| DS1330YP-70 | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1345ABP-70 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1345WP-150 | 128K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34 |
| DS1345YP-100 | 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1330ABP-70+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1330ABP-70IND | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1330ABP-70-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330ABP-70IND+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1330BL-100 | 功能描述:IC NVSRAM 256KBIT 100NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
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