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参数资料
| 型号： | DS1350W |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | DRAM |
| 英文描述： | 3.3V 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的3.3V 4096K非易失性SRAM) |
| 中文描述： | 512K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34 |
| 文件页数： | 3/11页 |
| 文件大小： | 112K |
| 代理商： | DS1350W |
DS1350W
022598 3/11
ABSOLUTE MAXIMUM RATINGS*
Voltage On Any Pin Relative To Ground
Operating Temperature
Storage Temperature
Soldering Temperature
–0.3V to +4.6V
0
°
C to 70
°
C, –40
°
C to +85
°
C for IND parts
–40
°
C to +70
°
C, –40
°
C to +85
°
C for IND parts
260
°
C For 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(t
A
: See Note 10)
UNITS
PARAMETER
SYMBOL
MIN
TYP
MAX
NOTES
Power Supply Voltage
V
CC
3.0
3.3
3.6
V
Logic 1
V
IH
2.2
V
CC
V
Logic 0
V
IL
0.0
0.4
V
DC ELECTRICAL CHARACTERISTICS
(t
A
: See Note 10) (V
CC
=3.3V
±
0.3V)
MAX
UNITS
PARAMETER
SYMBOL
MIN
TYP
NOTES
Input Leakage Current
I
IL
–1.0
+1.0
μ
A
I/O Leakage Current
CE
≥
V
IH
≤
V
CC
I
IO
–1.0
+1.0
μ
A
Output Current @ 2.2V
I
OH
–1.0
mA
14
Output Current @ 0.4V
I
OL
2.0
mA
14
Standby Current CE = 2.2V
I
CCS1
50
250
μ
A
Standby Current CE = V
CC
–0.2V
I
CCS2
30
150
μ
A
Operating Current
I
CCO1
50
mA
Write Protection Voltage
V
TP
2.8
2.9
3.0
V
CAPACITANCE
(t
A
= 25
°
C)
NOTES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Input Capacitance
C
IN
5
10
pF
Input/Output Capacitance
C
I/O
5
10
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1350W-150 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 4096K Nonvolatile SRAM with Battery Monitor |
| DS1350WP-100 | 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1350WP-100+ | 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1350WP-100IND | 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1350WP-100IND+ | 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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