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参数资料
| 型号： | DS1500WE |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Timer or RTC |
| 英文描述： | REAL TIME CLOCK, PDSO32 |
| 封装： | TSOP-32 |
| 文件页数： | 2/25页 |
| 文件大小： | 214K |
| 代理商： | DS1500WE |
DS1500/DS1510
10 of 25
BATTERY MONITOR
The DS1500/DS1510 constantly monitors the battery voltage of the back-up battery sources
(VBAT and VBAUX). The Battery Low Flags VRT1 and VRT2 will be set to a "1" if the battery voltage on
VBAT and VBAUX are less than 2.5V (typical), otherwise VRT1 and VRT2 will be a "0". VRT1 monitors
VBAT, and VRT2 monitors VBAUX.
POWER-UP DEFAULT STATES
These bits are set upon power-up: EOSC ="0", E32K ="0", TIE="0", KIE="0", WDE="0", and WDS="0".
256 X 8 EXTENDED RAM
The DS1500/DS1510 provides 256 x 8 of on-chip SRAM which is controlled as nonvolatile storage
sustained from a lithium battery. On power-up, the RAM is taken out of write protect status by an internal
signal.
Access to the SRAM is controlled by two on-chip latch registers. One register is used to hold the SRAM
address, and the other is used to hold read/write data. The SRAM address space is from 00h to FFh. The
8-bit address of the RAM location to be accessed must be loaded into the extended RAM address register
located at 10h. Data in the addressed location may be read by performing a read operation from location
13h, or written to by performing a write operation to location 13h. Data in any addressed location may be
read or written repeatedly with changing the address in location 10h.
To read or write consecutive extended RAM locations, a burst mode feature can be enabled to increment
the extended RAM address. To enable the burst mode feature, set the BME bit to a 1. With burst mode
enabled, write the extended RAM starting address location to register 10h. Then read or write the
extended RAM data from/to register 13h. The extended RAM address locations are automatically
incremented on the rising edge of OE , WE , or CS only when register 13h is being accessed. Refer to the
Burst Mode Timing Waveform (Figure 6).
相关PDF资料 |
PDF描述 |
|---|---|
| DS1500W | REAL TIME CLOCK, PDIP32 |
| DS1500WN | REAL TIME CLOCK, PDIP32 |
| DS1500YE | REAL TIME CLOCK, PDSO32 |
| DS1500YEN | REAL TIME CLOCK, PDSO32 |
| DS1500YN | REAL TIME CLOCK, PDIP32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1500WE+ | 功能描述:实时时钟 Y2K-Compliant Watchdog RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1500WEN | 功能描述:IC RTC Y2KC W/NV CTRL 32-TSOP RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| DS1500WEN+ | 功能描述:实时时钟 Y2K-Compliant Watchdog RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1500WN | 功能描述:IC RTC Y2KC W/NV CTRL 32-DIP RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| DS1500Y | 功能描述:IC RTC Y2KC W/NV CTRL 5V 32-DIP RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
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