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参数资料
| 型号： | DS1501W |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Timer or RTC |
| 英文描述： | 1 TIMER(S), REAL TIME CLOCK, PDIP28 |
| 封装： | DIP-28 |
| 文件页数： | 8/30页 |
| 文件大小： | 291K |
| 代理商： | DS1501W |
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DS1501/DS1511
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SQUARE WAVE OUTPUT
The square wave output is enabled and disabled via the E32K bit. If the square wave is enabled
( E32K ="0") and the oscillator is running, then a 32.768 kHz square wave will be output on the SQW pin.
If the Battery Backup 32 kHz enable bit (BB32) is enabled, and voltage is applied to VBAUX, then the
32.768 kHz square wave will be output on the SQW pin in the absence of VCC.
BATTERY MONITOR
The DS1501/DS1511 constantly monitors the battery voltage of the back-up battery sources (VBAT and
VBAUX). The Battery Low Flags BLF1 and BLF2 will be set to a "1" if the battery voltage on VBAT and
VBAUX are less than 2.5 volts (typical), otherwise BLF1 and BLF2 will be a "0". BLF1 monitors VBAT,
and BLF2 monitors VBAUX.
POWER-UP DEFAULT STATES
These bits are set upon power-up: EOSC ="0", E32K ="0", TIE="0", KIE="0", WDE="0", and WDS="0".
256 X 8 EXTENDED RAM
The DS1501/DS1511 provides 256 x 8 of on-chip SRAM which is controlled as nonvolatile storage
sustained from a lithium battery. On power-up, the RAM is taken out of write protect status by an internal
signal.
Access to the SRAM is controlled by two on-chip latch registers. One register is used to hold the SRAM
address, and the other is used to hold read/write data. The SRAM address space is from 00h to FFh. The
8-bit address of the RAM location to be accessed must be loaded into the extended RAM address register
located at 10h. Data in the addressed location may be read by performing a read operation from location
13h, or written to by performing a write operation to location 13h. Data in any addressed location may be
read or written repeatedly with changing the address in location 10h.
To read or write consecutive extended RAM locations, a burst mode feature can be enabled to increment
the extended RAM address. To enable the burst mode feature, set the BME bit to a 1. With burst mode
enabled, write the extended RAM starting address location to register 10h. Then read or write the
extended RAM data from/to register 13h. The extended RAM address locations are automatically
incremented on the rising edge of OE , WE , or CS only when register 13h is being accessed. Refer to the
Burst Mode Timing Waveform (Figure 7).
相关PDF资料 |
PDF描述 |
|---|---|
| DS1501YS | 1 TIMER(S), REAL TIME CLOCK, PDSO28 |
| DS1501WE | 1 TIMER(S), REAL TIME CLOCK, PDSO28 |
| DS1553W-150 | 0 TIMER(S), REAL TIME CLOCK, PDIP28 |
| DS1553P-70 | 0 TIMER(S), REAL TIME CLOCK, DMA34 |
| DS1553-70 | 0 TIMER(S), REAL TIME CLOCK, PDIP28 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1501W+ | 功能描述:实时时钟 Y2K-Compliant Watchdog RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1501WE | 功能描述:实时时钟 Y2K-Compliant Watchdog RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1501WE/T&R | 制造商:Maxim Integrated Products 功能描述:IC RTC WDOG Y2KC 3.3V 28-TSOP |
| DS1501WE/T&R | 功能描述:实时时钟 Y2K-Compliant Watchdog RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1501WE/T&R/C02 | 功能描述:实时时钟 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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