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参数资料
| 型号： | DS1609 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | Dual Port RAM(双端口RAM) |
| 中文描述： | 256 X 8 DUAL-PORT SRAM, 50 ns, PDIP24 |
| 封装： | 0.600 INCH, PLASTIC, DIP-24 |
| 文件页数： | 7/7页 |
| 文件大小： | 56K |
| 代理商： | DS1609 |
DS1609
021998 7/7
NOTES:
1. All Voltages are referenced to ground.
2. All pins other than CE, WE, OE, V
CC
and ground are continuously driven by a feedback latch in order to hold
the inputs at one power supply rail or the other when an input is tristated. The minimum driving impedance
presented to any pin is 50K
. If a pin is at a logic low level, this impedance will be pulling the pin to ground. If
a pin is at a logic high level, this impedance will be pulling the pin to V
CC
.
3. Standby current is measured with outputs open circuited.
4. I
CCS1
is measured with all pins within 0.3V of V
CC
or GND and with CE at a logic high or logic low level.
5. I
CCS2
is measured with all pins within 0.3V of V
CC
or ground and with CE within 0.3V of V
CC
.
6. I
CCS3
is measured with all pins at V
CC
or ground potential and with CE = V
CC
. Note that if a pin is floating,
the internal feedback latches will pull all the pins to one power supply rail or the other.
7. Active current is measured with outputs open circuited, and inputs swinging full supply levels with one port
reading and one port writing at 100 ns cycle time. Active currents are a DC average with respect to the num-
ber of 0’s and 1’s being read or written.
8. Logic one voltages are specified at a source current of 1 mA.
9. Logic zero voltages are specified at a sink current of 4 mA.
10.Measured with a load as shown in Figure 3
.
11. t
WP
is defined as the time from WE going low to the first of the rising edges of WE and CE.
12.Recovery time is the amount of time control signals must remain high between successive cycles.
13.Typical values are at 25
°
C.
LOAD SCHEMATIC
Figure 3
+5 VOLTS
30 pF
D.U.T.
1.1K
680
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1609-35 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
| DS1609-50 | 功能描述:RAM其它 RoHS:否 制造商:Freescale Semiconductor 封装:Tray |
| DS1609-50+ | 功能描述:RAM其它 Dual Port RAM RoHS:否 制造商:Freescale Semiconductor 封装:Tray |
| DS1609N-35 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
| DS1609N-50 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
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