参数资料
型号: DS1609S-50
厂商: Maxim Integrated
文件页数: 1/7页
文件大小: 0K
描述: IC SRAM 2KBIT 50NS 24SOIC
标准包装: 31
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 2K (256 x 8)
速度: 50ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 24-SOIC(0.295",7.50mm 宽)
供应商设备封装: 24-SOIC W
包装: 管件
其它名称: DS1609S50
DS1609
DS1609
Dual Port RAM
FEATURES
PIN ASSIGNMENT
? Totally asynchronous 256–byte dual port memory
? Multiplexed address and data bus keeps pin count
low
? Dual port memory cell allows random access with
minimum arbitration
? Each port has standard independent RAM control sig-
nals
? Fast access time
? Low power CMOS design
? 24–pin DIP or 24–pin SOIC surface mount package
PORT A
AD7 A
AD6 A
AD5 A
AD4 A
AD3 A
AD2 A
AD1 A
AD0 A
WE A
CE A
OE A
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
PORT B
V CC
OE B
CE B
WE B
AD0 B
AD1 B
AD2 B
AD3 B
AD4 B
AD5 B
AD6 B
AD7 B
? Both CMOS and TTL compatible
DS1609
24–PIN DIP (600 MIL)
See Mech. Drawings
? Operating temperature of –40 ° C to +85 ° C
PORT A
Section
PORT B
? Standby current of 100 nA @ 25 ° C makes the device
ideal for battery backup or battery operate applica-
tions.
AD7 A
AD6 A
AD5 A
AD4 A
AD3 A
AD2 A
AD1 A
A D0 A
WE A
CE A
OE A
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V CC
OE B
CE B
WE B
AD0 B
AD1 B
AD2 B
AD3 B
AD4 B
AD5 B
AD6 B
AD7 B
DS1609S
24–PIN SOIC (300 MIL)
See Mech. Drawings
Section
PIN DESCRIPTION
DESCRIPTION
AD0–AD7
CE
WE
OE
V CC
GND
Port address/data
Port enable
Write enable
Output enable
+5 volt supply
Ground
The DS1609 is a random access 256–byte dual port
memory designed to connect two asyncronous ad-
dress/data buses together with a common memory ele-
ment. Both ports have unrestricted access to all
by three control signals: output enable, write enable,
and port enable. The device is packaged in plastic
24–pin DIP and 24–pin SOIC. Output enable access
time of 50 ns is available when operating at 5 volts.
256 bytes of memory, and with modest system disci-
pline no arbitration is required. Each port is controlled
020499 1/7
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