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参数资料
| 型号： | DS1646P-120+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC RAM TIMEKEEP NV 120NS 34-PCM |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 40 |
| 类型： | 时钟/日历 |
| 特点： | 闰年，NVSRAM |
| 存储容量： | 128KB |
| 时间格式： | HH:MM:SS（24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 电压 - 电源，电池： | 3V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 34-PowerCap? 模块 |
| 供应商设备封装： | 34-PowerCap 模块 |
| 包装： | 管件 |
| 产品目录页面： | 1432 (CN2011-ZH PDF) |
DS1646/DS1646P
6 of 12
WRITING DATA TO RAM OR CLOCK
The DS1646 is in the write mode whenever WE and CE are in their active state. The start of a write is
referenced to the latter occurring high to low transition of WE and CE . The addresses must be held valid
throughout the cycle. CE or WE must return inactive for a minimum of tWR prior to the initiation of
another read or write cycle. Data in must be valid tDS prior to the end of write and remain valid for tDH
afterward. In a typical application, the OE signal will be high during a write cycle. However, OE can be
active provided that care is taken with the data bus to avoid bus contention. If OE is low prior to WE
transitioning low the data bus can become active with read data defined by the address inputs. A low
transition on WE will then disable the outputs tWEZ after WE goes active.
DATA RETENTION MODE
When VCC is within nominal limits (VCC > 4.5 volts) the DS1646 can be accessed as described above with
read or write cycles. However, when VCC is below the power-fail point VPF (point at which write
protection occurs) the internal clock registers and RAM are blocked from access. This is accomplished
internally by inhibiting access via the CE signal. At this time the power-fail output signal ( PFO ) will be
driven active low and will remain active until VCC returns to nominal levels. When VCC falls below the
level of the internal battery supply, power input is switched from the VCC pin to the internal battery and
clock activity, RAM, and clock data are maintained from the battery until VCC is returned to nominal
level.
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| DS1644P-120+ | IC RAM TIMEKEEP NV 120NS 34-PCM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1646P-120+ | 功能描述:实时时钟 NV Timekeeping RAM RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1647 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Nonvolatile Timekeeping RAM |
| DS1647-12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1647-120 | 功能描述:实时时钟 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1647-120+ | 功能描述:实时时钟 NV Timekeeping RAM RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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