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参数资料
| 型号： | DS1846E-010+T&R |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 13/18页 |
| 文件大小： | 0K |
| 描述： | IC NV TRI-POT MEM MON 20TSSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 接片： | 100，256 |
| 电阻（欧姆）： | 10k，100k |
| 电路数： | 3 |
| 温度系数： | 标准值 750 ppm/°C |
| 存储器类型： | 非易失 |
| 接口： | 3 线串行（设备位址） |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 20-TSSOP |
| 包装： | 带卷 (TR) |
DS1846
4 of 18
MEMORY ORGANIZATION
The EEPROM of the DS1846 contains 256 bytes. Bytes 00h to F7h are general-purpose user memory.
The next three bytes, F8h, F9h, and FAh, contain the wiper settings for each of the potentiometers (see
Table 1). The last five bytes, FBh to FFh, are reserved and should not be used.
The memory, internal to the device, is organized as 32 pages of eight bytes each. Once an address byte is
clocked into the device through the 2-wire interface, the five MSBs decode which page is to be accessed,
and the three LSBs decode a particular byte on that page. The selected page is shadowed in SRAM as a
staging area while data is clocked in or out through the 2-wire interface. When reading any number of
bytes, all eight bytes of the current page are shadowed in SRAM where the requested byte(s) eventually
get clocked out. When reading, the page is incremented automatically, and hence transparent to the user.
When performing a write, the page of the starting address is shadowed in SRAM. The new data is then
written to the SRAM. When the end of the page is reached, the address returns to the beginning of the
same page. When the 2-wire master issues a stop, the entire page (even if only a single byte changed) is
copied from the SRAM into EEPROM. All reads and writes to the EEPROM are actually executed as
page operations even though they are invisible to the user when performing single byte reads and writes.
Understanding the internal memory organization is important when performing sequential address writes
due to page boundaries. See the Write Operations in the 2-WIRE OPERATION section for more
information.
MEMORY LOCATIONS Table 1
MEMORY
LOCATION
NAME OF MEMORY
LOCATION
FUNCTION OF MEMORY LOCATION
00h to F7h
User Memory
General-purpose user memory.
F8h
Potentiometer 1 Setting
Writing to this byte controls the setting of potentiometer 1, a
256-position pot. Valid settings are 00h to FFh.
F9h
Potentiometer 0 Setting
Writing to this byte controls the setting of potentiometer 0, a
100-position pot. Valid settings are 00h to 63h. MSB is ignored.
FAh
Potentiometer 2 Setting
Writing to this byte controls the setting of potentiometer 0, a
100-position pot. Valid settings are 00h to 63h. MSB is ignored.
FBh to FFh
Reserved
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1847 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Dual Temperature-Controlled NV Variable Resistor |
| DS1847-010 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Dual Temperature-Controlled NV Variable Resistor |
| DS1847-050 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Dual Temperature-Controlled NV Variable Resistor |
| DS1847B-010 | 功能描述:数字电位计 IC RoHS:否 制造商:Maxim Integrated 电阻:200 Ohms 温度系数:35 PPM / C 容差:25 % POT 数量:Dual 每 POT 分接头:256 弧刷存储器:Volatile 缓冲刷: 数字接口:Serial (3-Wire, SPI) 描述/功能:Dual Volatile Low Voltage Linear Taper Digital Potentiometer 工作电源电压:1.7 V to 5.5 V 电源电流:27 uA 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-16 封装:Reel |
| DS1847B-010/T&R | 制造商:Maxim Integrated Products 功能描述:DUAL NV TEMP CNTRL VAR RES 10/10K T - Tape and Reel |
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