参数资料
型号: DS18B20-SL+T&R
厂商: MAXIM INTEGRATED PRODUCTS INC
元件分类: Switch/Digital Output Temperature Sensor
英文描述: DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 0.50Cel, RECTANGULAR, THROUGH HOLE MOUNT
封装: LEAD FREE, TO-92, 3 PIN
文件页数: 20/22页
文件大小: 255K
代理商: DS18B20-SL+T&R
DS18B20
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MEMORY
The DS18B20’s memory is organized as shown in Figure 7. The memory consists of an SRAM
scratchpad with nonvolatile EEPROM storage for the high and low alarm trigger registers (TH and TL)
and configuration register. Note that if the DS18B20 alarm function is not used, the TH and TL registers
can serve as general-purpose memory. All memory commands are described in detail in the DS18B20
Function Commands section.
Byte 0 and byte 1 of the scratchpad contain the LSB and the MSB of the temperature register,
respectively. These bytes are read-only. Bytes 2 and 3 provide access to TH and TL registers. Byte 4
contains the configuration register data, which is explained in detail in the Configuration Register section.
Bytes 5, 6, and 7 are reserved for internal use by the device and cannot be overwritten.
Byte 8 of the scratchpad is read-only and contains the CRC code for bytes 0 through 7 of the scratchpad.
The DS18B20 generates this CRC using the method described in the CRC Generation section.
Data is written to bytes 2, 3, and 4 of the scratchpad using the Write Scratchpad [4Eh] command; the data
must be transmitted to the DS18B20 starting with the least significant bit of byte 2. To verify data
integrity, the scratchpad can be read (using the Read Scratchpad [BEh] command) after the data is
written. When reading the scratchpad, data is transferred over the 1-Wire bus starting with the least
significant bit of byte 0. To transfer the TH, TL and configuration data from the scratchpad to EEPROM,
the master must issue the Copy Scratchpad [48h] command.
Data in the EEPROM registers is retained when the device is powered down; at power-up the EEPROM
data is reloaded into the corresponding scratchpad locations. Data can also be reloaded from EEPROM to
the scratchpad at any time using the Recall E
2
[B8h] command. The master can issue read time slots
following the Recall E
2 command and the DS18B20 will indicate the status of the recall by transmitting 0
while the recall is in progress and 1 when the recall is done.
Figure 7. DS18B20 Memory Map
SCRATCHPAD
(POWER-UP STATE)
Byte 0
Temperature LSB (50h)
Byte 1
Temperature MSB (05h)
EEPROM
Byte 2
TH Register or User Byte 1*
TH Register or User Byte 1
Byte 3
TL Register or User Byte 2*
TL Register or User Byte 2
Byte 4
Configuration Register*
Configuration Register
Byte 5
Reserved (FFh)
Byte 6
Reserved
Byte 7
Reserved (10h)
Byte 8
CRC*
*Power-up state depends on value(s) stored in EEPROM.
(85°C)
相关PDF资料
PDF描述
DS18B20/T&R DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 0.50Cel, RECTANGULAR, THROUGH HOLE MOUNT
DS18B20U DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 0.50Cel, SQUARE, SURFACE MOUNT
DS18B20U/T&R DIGITAL TEMP SENSOR-SERIAL, 12BIT(s), 0.50Cel, SQUARE, SURFACE MOUNT
DS18S20-PAR/T&R DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 0.50Cel, ROUND, THROUGH HOLE MOUNT
DS18S20-PAR DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 0.50Cel, ROUND, THROUGH HOLE MOUNT
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