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参数资料
| 型号： | DS1920-F5+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 15/22页 |
| 文件大小： | 0K |
| 描述： | IBUTTON TEMPERATURE F5 |
| 产品培训模块： | Obsolescence Mitigation Program |
| RoHS指令信息： | IButton RoHS Compliance Plan |
| 标准包装： | 25 |
| 系列： | iButton® |
| 存储容量： | 2B |
| 存储器类型： | EEPROM |
DS1920
READ/WRITE TIME SLOTS
The definitions of write and read time slots are illustrated in Figure 11. All time slots are initiated by the
master driving the data line low. The falling edge of the data line synchronizes the DS1920 to the master
by triggering a delay circuit in the DS1920. During write time slots, the delay circuit determines when the
DS1920 will sample the data line. For a read data time slot, if a 0 is to be transmitted, the delay circuit
determines how long the DS1920 will hold the data line low overriding the 1 generated by the master. If
the data bit is a 1, the DS1920 will leave the read data time slot unchanged.
STRONG PULLUP
To provide energy for a temperature conversion or for copying data from the scratchpad to the EEPROM,
a low-impedance pullup of the 1-Wire bus to 5V is required just after the corresponding command has
been sent by the master. During temperature conversion or copying the scratchpad, the bus master
controls the transition from a state where the data line is idling high via the pullup resistor to a state where
the data line is actively driven to 5V, providing a minimum of 1mA of current for each DS1920 doing
temperature conversion. This low impedance pullup should be active for 0.75 seconds for temperature
conversion or at least 10ms for copying to the scratchpad. After that, the data line returns to an idle high
state controlled by the pullup resistor. The low-impedance pullup does not affect other devices on the
1-Wire bus. Therefore, it is possible to multidrop other 1-Wire devices with the DS1920.
INITIALIZATION PROCEDURE “RESET AND PRESENCE PULSES” Figure 10
RESISTOR
MASTER
DS1920
480 μ s ≤ t RSTL < ∞ ?
480 μ s ≤ t RSTH < ∞ (includes recovery time)
15 μ s ≤ t PDH < 60 μ s
60 μ s ≤ t PDL < 240 μ s
* In order not to mask interrupt signaling by other devices on the 1-Wire bus, t RSTL + t R should
always be less than 960 μ s.
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相关PDF资料 |
PDF描述 |
|---|---|
| DS1921G-F5# | IBUTTON THERMOCHRON F5 |
| DS1921H-F5# | IBUTTON THERMOCHRON F5 |
| DS1921K# | KIT IBUTTON THERMOCHRON |
| DS1922E-F5# | IBUTTON TEMP LOGGER 4KBit F5 |
| DS1922L-F5# | IBUTTON TEMP LOGGER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1920-F5+ | 功能描述:iButton Temperature iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1921 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:High-Resolution Thermochron iButton |
| DS1921G | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Thermochron iButton |
| DS1921G_11 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:Logs Up to 2048 Consecutive Temperature Thermochron iButton |
| DS1921G_1109 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:Thermochron iButton |
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