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参数资料
| 型号： | DS1982-F3+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 7/24页 |
| 文件大小： | 0K |
| 描述： | IBUTTON 1KBit ADD-ONLY F3 |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| RoHS指令信息： | IButton RoHS Compliance Plan |
| 标准包装： | 153 |
| 系列： | iButton® |
| 存储容量： | 128B |
| 存储器类型： | EPROM |
| 产品目录页面： | 1431 (CN2011-ZH PDF) |
DS1982
MEMORY FUNCTION COMMANDS
The “Memory Function Flow Chart” (Figure 6) describes the protocols necessary for accessing the
various data fields within the DS1982. The Memory Function Control section, 8-bit scratchpad, and the
Program Voltage Detect circuit combine to interpret the commands issued by the bus master and create
the correct control signals within the device. A 3-byte protocol is issued by the bus master. It is comprised
of a command byte to determine the type of operation and 2 address bytes to determine the specific
starting byte location within a data field. The command byte indicates if the device is to be read or
written. Writing data involves not only issuing the correct command sequence but also providing a 12-
volt programming voltage at the appropriate times. To execute a write sequence, a byte of data is first
loaded into the scratchpad and then programmed into the selected address. Write sequences always occur
a byte at a time. To execute a read sequence, the starting address is issued by the bus master and data is
read from the part beginning at that initial location and continuing to the end of the selected data field or
until a reset sequence is issued. All bits transferred to the DS1982 and received back by the bus master
are sent least significant bit first.
DS1982 MEMORY MAP Figure 5
8-BIT SCRATCHPAD
STARTING
ADDRESS
0000h
0020h
PAGE 0
32 BYTES
PAGE 1
1024-BIT
EPROM
0040h
0060h
32 BYTES
PAGE 2
32 BYTES
PAGE 3
32 BYTES
EPROM STATUS BYTES
ADDRESS:
0007h
0006h
0005h
0004h
0003h
0002h
0001h
0000h
(MSB)
BIT 0
BIT 1
BIT 2
BIT 3
BIT 4-7
(LSB)
WRITE PROTECT PAGE 0
WRITE PROTECT PAGE 1
WRITE PROTECT PAGE 2
WRITE PROTECT PAGE 3
BITMAP OF USED PAGES (RESERVED FOR TMEX)
Page 7 of 24
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1982-F3# | 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1982-F3+ | 功能描述:iButton 1Kb Add-Only iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1982-F5 | 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1982-F5# | 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1982-F5+ | 功能描述:iButton 1Kb Add-Only iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
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