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参数资料
| 型号： | DS2227-120 |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 512K X 8 NON-VOLATILE SRAM MODULE, 120 ns, SMA72 |
| 封装： | STIK, SIP-72 |
| 文件页数： | 10/10页 |
| 文件大小： | 191K |
| 代理商： | DS2227-120 |
DS2227
9 of 10
NOTES:
1.
WE
is high for a read cycle.
2.
OE
= VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high impedance
state.
3.
tWP is specified as the logical AND of CE and WE .
4.
tDH, tDS are measured from the earlier of CE or WE going high.
5.
tDH is measured from WE going high. If CE is used to terminate the write cycle then tDH = 20 ns.
6.
If the CE low transition occurs simultaneously with or later than the WE low transition, the
output buffers remain in a high impedance state in this period.
7.
If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state in this period.
8.
If the WE is low or the WE low transition occurs prior to or simultaneously with the CE low
transition, the output buffers remain in a high impedance state in this period.
9.
Each DS2227 is marked with a 4-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The minimum expected tDR is defined as starting at the
date of manufacture.
10.
Timings are valid only when CE is tied low.
DC TEST CONDITIONS
Outputs Open
Cycle = 200 ns
All Voltages are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL gate
Input Pulse Levels: 0 - 3.0 V
Timing Measurements Reference Levels:
Input - 1.5V
Output - 1.5V
Input Pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
相关PDF资料 |
PDF描述 |
|---|---|
| DS2229 | 512K X 16 MULTI DEVICE SRAM MODULE, 85 ns, SMA80 |
| DS2251T | 8-BIT, MICROCONTROLLER, SMA72 |
| DS2290 | SPECIALTY TELECOM CIRCUIT, SMA30 |
| DS2291 | SPECIALTY TELECOM CIRCUIT, SMA30 |
| DS229EN | LINE TRANSCEIVER, PDSO20 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2227-70 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Flexible NV SRAM Stik |
| DS2228-100 | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| DS2229 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Word-Wide 8 Meg SRAM Stik |
| DS2229-100 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM Module |
| DS2229-120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM Module |
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