参数资料
| 型号： | DS2431+T&R |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 3/27页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1KBIT TO92-3 |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K（256 x 4） |
| 接口： | 1 线 串行 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | TO-226-3、TO-92-3（TO-226AA）成形引线 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 带卷 (TR) |
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DS2431
1024-Bit, 1-Wire EEPROM
ELECTRICAL CHARACTERISTICS (continued)
(T A = -40°C to +85°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
IO PIN: 1-Wire WRITE
Standard speed
60
120
Write-Zero Low Time
(Notes 2, 16, 17)
t W0L
Overdrive speed, V PUP > 4.5V
5
15.5
μs
Overdrive speed
6
15.5
Write-One Low Time
(Notes 2, 17)
t W1L
Standard speed
Overdrive speed
1
1
15
2
μs
IO PIN: 1-Wire READ
Read Low Time
(Notes 2, 18)
Read Sample Time
(Notes 2, 18)
t RL
t MSR
Standard speed
Overdrive speed
Standard speed
Overdrive speed
5
1
t RL +
t RL +
15 -
2-
15
2
μs
μs
EEPROM
Programming Current
Programming Time
Write/Erase Cycles (Endurance)
(Notes 22, 23)
Data Retention
(Notes 24, 25, 26)
I PROG
t PROG
N CY
t DR
(Notes 5, 19)
(Notes 20, 21)
At +25°C
At +85°C (worst case)
At +85°C (worst case)
200k
50k
40
0.8
10
mA
ms
Years
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
Note 11:
Note 12:
Note 13:
Note 14:
Note 15:
Note 16:
Note 17:
Note 18:
Limits are 100% production tested at T A = +25°C and/or T A = +85°C. Limits over the operating temperature range and rel-
evant supply voltage range are guaranteed by design and characterization. Typical values are not guaranteed.
System requirement.
Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system and 1-Wire recovery times.
The specified value here applies to systems with only one device and with the minimum 1-Wire recovery times. For more
heavily loaded systems, an active pullup such as that found in the DS2482-x00, DS2480B, or DS2490 may be required.
Maximum value represents the internal parasite capacitance when V PUP is first applied. Once the parasite capacitance is
charged, it does not affect normal communication.
Guaranteed by design, characterization, and/or simulation only. Not production tested.
V TL , V TH , and V HY are a function of the internal supply voltage, which is a function of V PUP , R PUP , 1-Wire timing, and
capacitive loading on IO. Lower V PUP , higher R PUP , shorter t REC , and heavier capacitive loading all lead to lower values of
V TL , V TH , and V HY .
Voltage below which, during a falling edge on IO, a logic 0 is detected.
The voltage on IO must be less than or equal to V ILMAX at all times the master is driving IO to a logic 0 level.
Voltage above which, during a rising edge on IO, a logic 1 is detected.
After V TH is crossed during a rising edge on IO, the voltage on IO must drop by at least V HY to be detected as logic 0.
The I-V characteristic is linear for voltages less than 1V.
Applies to a single device attached to a 1-Wire line.
The earliest recognition of a negative edge is possible at t REH after V TH has been reached on the preceding rising edge.
Defines maximum possible bit rate. Equal to t W0LMIN + t RECMIN .
Interval after t RSTL during which a bus master can read a logic 0 on IO if there is a DS2431 present. The power-up presence-
detect pulse could be outside this interval, but will be complete within 2ms after power-up.
Numbers in bold are not in compliance with legacy 1-Wire product standards. See the Comparison Table.
ε in Figure 11 represents the time required for the pullup circuitry to pull the voltage on IO up from V IL to V TH . The actual
maximum duration for the master to pull the line low is t W1LMAX + t F - ε and t W0LMAX + t F - ε , respectively.
δ in Figure 11 represents the time required for the pullup circuitry to pull the voltage on IO up from V IL to the input-high
threshold of the bus master. The actual maximum duration for the master to pull the line low is t RLMAX + t F .
Maxim Integrated
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2431X | 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| DS2431X+ | 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| DS2431X+S | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit, 1-Wire EEPROM |
| DS2431X+U | 功能描述:电可擦除可编程只读存储器 1024-BIT 1-WIRE 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| DS2431X-S | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit, 1-Wire EEPROM |
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