参数资料
| 型号： | DS2431P+T&R |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 19/27页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1KBIT 6TSOC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 4,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K（256 x 4） |
| 接口： | 1 线 串行 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 6-LSOJ |
| 供应商设备封装： | 6-TSOC |
| 包装： | 带卷 (TR) |
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DS2431
1024-Bit, 1-Wire EEPROM
Improved Network Behavior
(Switchpoint Hysteresis)
In a 1-Wire environment, line termination is possible
only during transients controlled by the bus master
(1-Wire driver). 1-Wire networks, therefore, are suscep-
tible to noise of various origins. Depending on the
physical size and topology of the network, reflections
from end points and branch points can add up or can-
cel each other to some extent. Such reflections are visi-
ble as glitches or ringing on the 1-Wire communication
line. Noise coupled onto the 1-Wire line from external
sources can also result in signal glitching. A glitch dur-
ing the rising edge of a time slot can cause a slave
device to lose synchronization with the master and,
consequently, result in a Search ROM command com-
ing to a dead end or cause a device-specific function
command to abort. For better performance in network
applications, the DS2431 uses a new 1-Wire front-end,
which makes it less sensitive to noise.
The DS2431’s 1-Wire front-end differs from traditional
slave devices in three characteristics.
1) There is additional lowpass filtering in the circuit that
detects the falling edge at the beginning of a time
slot. This reduces the sensitivity to high-frequency
noise. This additional filtering does not apply at
overdrive speed.
2) There is a hysteresis at the low-to-high switching
threshold V TH . If a negative glitch crosses V TH but
does not go below V TH - V HY , it is not recognized
(Figure 12, Case A). The hysteresis is effective at
any 1-Wire speed.
3) There is a time window specified by the rising edge
hold-off time t REH during which glitches are ignored,
even if they extend below the V TH - V HY threshold
t REH
V PUP
(Figure 12, Case B, t GL < t REH ). Deep voltage drops
or glitches that appear late after crossing the V TH
threshold and extend beyond the t REH window can-
not be filtered out and are taken as the beginning of a
new time slot (Figure 12, Case C, t GL ≥ t REH ).
Devices that have the parameters V HY and t REH speci-
fied in their electrical characteristics use the improved
1-Wire front-end.
CRC Generation
The DS2431 uses two different types of CRCs. One
CRC is an 8-bit type and is stored in the most signifi-
cant byte of the 64-bit ROM. The bus master can com-
pute a CRC value from the first 56 bits of the 64-bit
ROM and compare it to the value stored within the
DS2431 to determine if the ROM data has been
received error-free. The equivalent polynomial function
of this CRC is X 8 + X 5 + X 4 + 1. This 8-bit CRC is
received in the true (noninverted) form. It is computed
at the factory and lasered into the ROM.
The other CRC is a 16-bit type, generated according to
the standardized CRC-16 polynomial function X 16 + X 15
+ X 2 + 1. This CRC is used for fast verification of a data
transfer when writing to or reading from the scratchpad.
In contrast to the 8-bit CRC, the 16-bit CRC is always
communicated in the inverted form. A CRC generator
inside the DS2431 chip (Figure 13) calculates a new 16-
bit CRC, as shown in the command flowchart (Figure 7).
The bus master compares the CRC value read from the
device to the one it calculates from the data and
decides whether to continue with an operation or to
reread the portion of the data with the CRC error.
With the Write Scratchpad command, the CRC is gen-
erated by first clearing the CRC generator and then
shifting in the command code, the target addresses
TA1 and TA2, and all the data bytes as they were sent
t REH
V TH
V HY
CASE A
0V
Figure 12. Noise Suppression Scheme
Maxim Integrated
t GL
CASE B
t GL
CASE C
19
相关PDF资料 |
PDF描述 |
|---|---|
| DS2431+T&R | IC EEPROM 1KBIT TO92-3 |
| FT24C128A-UMR-B | IC EEPROM 128KBIT 1MHZ 8MSOP |
| FT24C128A-UDR-B | IC EEPROM 128KBIT 1MHZ 8DIP |
| FT24C128A-UTG-B | IC EEPROM 128KBIT 1MHZ 8TSSOP |
| FT24C128A-UTR-B | IC EEPROM 128KBIT 1MHZ 8TSSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2431Q R | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit, 1-Wire EEPROM |
| DS2431Q T | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit, 1-Wire EEPROM |
| DS2431Q+R | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit, 1-Wire EEPROM Individual Memory Pages Can Be Permanently |
| DS2431Q+T | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024-Bit, 1-Wire EEPROM Individual Memory Pages Can Be Permanently |
| DS2431Q+T&R | 制造商:Maxim Integrated Products 功能描述: 制造商:Maxim Integrated Products 功能描述:EEPROM SERL-1WIRE 1KBIT 4PAGES X 256 3.3V/5V 6TDFN EP - Tape and Reel 制造商:Maxim Integrated Products 功能描述:IC EEPROM 1KBIT 6TDFN 制造商:Maxim Integrated Products 功能描述:EEPROM 1024-Bit 1-Wire EEPROM |
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