- 您现在的位置：买卖IC网 > PDF目录97869 > DS2436B (DALLAS SEMICONDUCTOR) SPECIALTY MEMORY CIRCUIT, PBCY3 PDF资料下载
参数资料
| 型号： | DS2436B |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Memory IC:Other |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBCY3 |
| 封装： | TO-92, 3 PIN |
| 文件页数： | 2/29页 |
| 文件大小： | 505K |
| 代理商： | DS2436B |
第1页当前第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页
DS2436
10 of 29
MEMORY
The DS2436’s memory is divided into five pages, each page filling 32 bytes of address space. Not all of
the available addresses are used, however. Refer to the memory map of Figure 3 to see actual addresses
which are available.
The first three pages of memory consist of a scratchpad RAM and either EEPROM (pages 1 and 2) or
SRAM (page 3). The scratchpads help insure data integrity when communicating over the 1-Wire bus.
Data is first written to the scratchpad where it can be read back. After the data has been verified, a copy
scratchpad command will transfer the data to the EEPROM or SRAM. This process insures data integrity
when modifying the memory.
The fourth page of memory consists of registers which contain the Temperature, Voltage, and Status
registers. These registers are made from SRAM cells, except for the lock bit in the status register which is
implemented in EEPROM.
The fifth page of memory holds the Manufacturer ID and Cycle Count registers implemented in
EEPROM.
PAGE 1
The first page of memory has 24 bytes. It consists of scratchpad RAM and nonvolatile EEPROM
memory. These 24 bytes may be used to store any data, such as: battery chemistry descriptors,
manufacturing lot codes, etc.
This page may be locked to prevent data stored here from being changed inadvertently.
The nonvolatile and the scratchpad portions of this page are organized identically, as shown in Figure 3.
In this page, these two portions are referred to as NV1 and SP1, respectively.
PAGE 2
The second page of memory has 8 bytes. It consists of a scratchpad RAM and a nonvolatile EEPROM
memory. These 8 bytes may be used to store additional data. In contrast to Page 1 memory, the Lock
function is not available for Page 2.
PAGE 3
The third page of memory has 8 bytes. It consists of a scratchpad RAM and an SRAM memory. This
address space may be used to store additional data, provided that, should the battery discharge completely
and power to the DS2436 is lost, this data may also be lost without serious repercussions. Data which
must remain even if power to the DS2436 is lost should be placed in either Page 1 or Page 2.
Prefer this section of memory to store fuel gauge and self discharge information. If the battery dies and
this information is lost, no serious consequences will result since the user can easily determine that the
battery is dead.
PAGE 4
The fourth page of memory is used by the DS2436 to store the battery temperature and
voltage. A 2-byte Status Register informs of conversion progress and memory lock state.
相关PDF资料 |
PDF描述 |
|---|---|
| DS2436Z | SPECIALTY MEMORY CIRCUIT, PDSO8 |
| DS2490S | UNIVERSAL SERIAL BUS CONTROLLER, PDSO24 |
| DS2502P | 128 X 8 OTPROM, PDSO6 |
| DS2502S | 128 X 8 OTPROM, PDSO8 |
| DS2502 | 128 X 8 OTPROM, PBCY3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2436B/R | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Battery ID/Monitor Chip |
| DS2436B/T | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Battery ID/Monitor Chip |
| DS2436B/T&R | 制造商:Maxim Integrated Products 功能描述:BATTERY MONITOR TO-92 T&R - Tape and Reel |
| DS2436B/T&R | 功能描述:电池管理 RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| DS2436B+ | 功能描述:电池管理 RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。