参数资料
型号: DS24B33G+T&R
厂商: Maxim Integrated Products
文件页数: 4/23页
文件大小: 0K
描述: IC EEPROM 4KBIT 2SFN
产品培训模块: Obsolescence Mitigation Program
标准包装: 2,500
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K (256 x 16)
接口: 1 线
电源电压: 2.8 V ~ 5.25 V
工作温度: -40°C ~ 85°C
封装/外壳: 2-SFN
供应商设备封装: 2-SFN(6x6)
包装: 带卷 (TR)
DS24B33
1-Wire 4Kb EEPROM
ELECTRICAL CHARACTERISTICS (continued)
(T A = -40°C to +85°C.) (Note 1)
Note 19: The t PROG interval begins after the trailing rising edge on IO for the last time slot of the E/S byte for a valid copy scratch-
pad sequence. The interval ends once the device’s self-timed EEPROM programming cycle is complete and the current
drawn by the device has returned from I PROG to I L .
Note 20: Write-cycle endurance is degraded as T A increases.
Note 21: Not 100% production tested; guaranteed by reliability monitor sampling.
Note 22: Data retention is degraded as T A increases.
Note 23: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to data
sheet limit at operating temperature range is established by reliability testing.
Note 24: EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-time storage at elevated tem-
peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C.
Pin Configurations
TOP VIEW
SIDE VIEW
FRONT VIEW
GND
1
1
N.C.
1
+
8
N.C.
IO
2
2
N.C.
3
3
N.C.
2
DS24B33
7
N.C.
TO-92
FRONT VIEW (T&R VERSION)
1
IO
3
6
N.C.
GND
4
5
N.C.
2
TOP VIEW
SO
(208 mils)
3
BOTTOM VIEW
+
DS24B33
1
2
N.C.
1
6
N.C.
IO
GND
2
3
*EP
5
4
N.C.
N.C.
DS24B33
IO
GND
SFN
(6mm × 6mm × 0.9mm)
4
*EXPOSED PAD
TDFN
(3mm × 3mm)
NOTE: THE SFN PACKAGE IS QUALIFIED FOR ELECTRO-MECHANICAL CONTACT
APPLICATIONS ONLY, NOT FOR SOLDERING. FOR MORE INFORMATION, REFER TO
APPLICATION NOTE 4132: ATTACHMENT METHODS FOR ELECTRO-MECHANICAL
SFN PACKAGE.
Maxim Integrated
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