参数资料
型号: DS2731E+
厂商: Maxim Integrated Products
文件页数: 5/20页
文件大小: 0K
描述: IC MANAGEMENT BACKUP 28-TSSOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 1
功能: 备份管理
电池化学: 锂离子(Li-Ion)
电源电压: 10.8 V ~ 13.2 V
工作温度: -20°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 28-SOIC(0.173",4.40mm 宽)裸露焊盘
供应商设备封装: 28-TSSOP 裸露焊盘
包装: 管件
产品目录页面: 1436 (CN2011-ZH PDF)
Cache-Memory Battery-Backup Management IC
THERMAL PROTECTION CHARACTERISTICS
(V IN = +10.8V to +13.2V, T A = -20°C to +70°C, unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
THM Pin Internal Pullup Voltage
THM Pin Internal Resistance
Thermistor Overtemperature
HALT Threshold
Thermistor Overtemperature
Resume Threshold
Thermistor Undertemperature
HALT Threshold
Thermistor Undertemperature
Resume Threshold
Thermistor Disable
Threshold
Internal Overtemperature
Protection Threshold CCCV
SYMBOL
V THM
R THM
V HOT
V HYS-HOT
V COLD
V HYS-COLD
V DISABLE
T PROTECT_CCCV
CONDITIONS
(Notes 1, 12)
THM to C BIAS (Note 12)
(Notes 12, 13)
(Notes 12, 13)
(Notes 12, 13)
(Notes 12, 13)
(Notes 12, 13)
(Note 12)
MIN
9.8
0.271
0.727
0.02
TYP
V CBIAS
10.0
0.283
0.3055
0.739
0.714
0.03
160
MAX
10.2
0.292
0.748
0.04
UNITS
V
k
Ratio to
V CBIAS
Ratio to
V CBIAS
Ratio to
V CBIAS
Ratio to
V CBIAS
Ratio to
V CBIAS
°C
Internal Overtemperature
Hysteresis CCCV
T HYS-PROTECT_CCCV (Note 12)
-20
°C
Internal Overtemperature
Protection Threshold MEM_REG
Internal Overtemperature
Hysteresis MEM_REG
Charging Current Reduction
Threshold
Charging Current Reduction Rate
T PROTECT_MEMREG
T HYS-PROTECT_
MEMREG
T CHOKE
T CHOKE_RATE
(Note 14)
(Note 14)
(Note 12)
(Note 12)
165
-15
100
133
°C
°C
°C
mA/°C
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
Note 11:
Note 12:
Note 13:
Note 14:
All voltages referenced to AGND pin.
V CIN is equivalent to V AUX when V AUX is greater than V TRIP , otherwise V CIN is equivalent to V BATT+ .
Supply-current specification is only for current drain of the IC and does not include cell-charge current, load-supply cur-
rent, or any external resistor bias currents. The only exception is I SLEEP , which does account for complete current drain of
the lithium cell during low-battery conditions.
Below this voltage, the input is guaranteed to be logic-low.
Operating from 3.3V ±10%.
Above this voltage, the input is guaranteed to be logic-high.
Assumes an R SNS value of 0.05 ? .
Relative to V CV .
With recommended application circuit.
Includes complete package resistance.
This specification is from the rising or falling edge of ENS to the closure of the switch and includes whatever delay is in the
internal logic and FET drivers.
Applies to charger.
Multiply these values by C BIAS voltage to get value in volts. Recommended value of resistor in divider network is 10k ? ±1%.
Tolerance includes tolerances of internal resistance and C BIAS voltage.
Applies to memory buck regulator.
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