参数资料
型号: DS2906SZ
厂商: Dynex Semiconductor Ltd.
英文描述: Rectifier Diode
中文描述: 整流二极管
文件页数: 3/7页
文件大小: 102K
代理商: DS2906SZ
3/7
www.dynexsemi.com
DS2906SZ
SURGE RATINGS
Conditions
10ms half sine; T
case
= 150
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 150
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
I
FSM
Surge (non-repetitive) forward current
I
2
t
I
2
t for fusing
A
2
s
83
kA
22.0 x 10
6
A
2
s
66.5
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.013
Anode dc
Clamping force 83.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.001
Double side
-
150
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
75.0
91.0
kN
–55
150
o
C
Forward (conducting)
160
o
C
-
0.002
o
C/W
o
C/W
Cathode dc
-
0.013
o
C/W
Double side cooled
-
0.0065
o
C/W
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
Symbol
V
FM
I
RM
At V
RRM
, T
case
= 150
o
C
-
400
mA
-
1.06
V
At 3000A peak, T
case
= 25
o
C
Conditions
Min.
Max.
Units
34.5 x 10
6
-
-
At T
vj
= 150C
-
V
TO
Threshold voltage
r
T
Slope resistance
0.0763
m
At T
vj
= 150C
-
0.78
V
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