参数资料
型号: DS3906U+T&R
厂商: Maxim Integrated Products
文件页数: 13/14页
文件大小: 0K
描述: IC RESIST VAR TRPL 10USOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 3,000
接片: 64
电阻(欧姆): 1.45k,2.54k,2.54k
电路数: 3
温度系数: 标准值 60 ppm/°C
存储器类型: 非易失
接口: I²C(设备位址)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-µMAX
包装: 带卷 (TR)
DS3906
Triple NV Low Step Size Variable
Resistor Plus Memory
8
_____________________________________________________________________
ADDRESS
TYPE
NAME
FUNCTION
FACTORY
DEFAULT
00h to 0Fh
EEPROM
User memory
16 bytes of general-purpose user EEPROM.
00h
F8h
EEPROM
Resistor 0
3Fh
F9h
EEPROM
Resistor 1
3Fh
FAh
EEPROM
Resistor 2
Resistor 0-2 settings. See Table 2 and the Resistor
Registers/Settings section.
3Fh
FBh-FFh
Reserved
Table 1. DS3906 Memory Map
ADDRESS
VARIABLE RESISTOR
POSITION 3FH RESISTANCE
(k
)
NUMBER OF POSITIONS*
F8h
Resistor 0
2.54
F9h
Resistor 1
2.54
FAh
Resistor 2
1.45
64 (00h to 3Fh) + High-Z
Table 2. DS3906 Resistor Registers
* Writing a value greater than 3Fh to any of the resistor registers makes the corresponding resistor go High-Z. Position 3Fh is the
maximum position.
makes the corresponding resistor go High-Z. Plots for
both resistor sizes are shown on the front page of this
data sheet. It can be seen that, when an external resis-
tor is connected in parallel with the DS3906’s resistors,
the effective resistance is linear and capable of achiev-
ing sub-ohm and ohm steps.
The resistor settings are stored in EEPROM memory. It
is important to point out that the DS3906 EEPROM is
organized in 2-byte pages. This is transparent when
reading from the device or when performing single byte
writes. However, this limits the maximum number of
bytes that can be written in one I2C transaction to two.
Furthermore, the multiple byte writes must begin on
even memory addresses (00h, 02h, …., F8h, etc).
Additional information is provided later in the I2C
Communication section . Example communication
transactions are provided in Figure 3.
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