参数资料
型号: DS3920T-002+
厂商: Maxim Integrated
文件页数: 2/7页
文件大小: 1204K
描述: IC CURRENT MIRROR 5:1 SOT23-6
产品培训模块: Obsolescence Mitigation Program
标准包装: 2,500
功能: 电流镜像
输入电压: 2.97 V ~ 76 V
电流 - 输出: 4.4mA
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-6
包装: 管件
DS3920
Fast Current Mirror
  2
Maxim Integrated
Voltage Range on MIRIN, MIROUT,
and DIODE Relative to GND ............................-0.3V to +80V
Voltage Range on MIR
Relative to GND ..............................-0.3V to (V
DIODE
 + 0.6V)
Continuous Power Dissipation (T
A
 = +70NC)
SOT23 (derate 13.4mW/NC above +70NC) .............1072.4mW
Operating Junction Temperature Range .........-40NC to +150NC
Storage Temperature Range ............................-55NC to +135NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note 1: See the Typical Application Circuit.
Note 2: 1V DC change applied to MIRIN; 100FA at MIROUT; 4.99kI load to ground on MIR.
Note 3: Guaranteed by design; not production tested.
Note 4: Rising MIROUT transition from 10FA to 1mA; 15V < V
OUT
 < 76V.
ELECTRICAL CHARACTERISTICS
(V
MIRIN
 = 2.97V to 76V, T
A
 = -40NC to +85NC, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
MIRIN Voltage
V
MIRIN
2.97
76
V
MIRIN Current
I
MIRIN
I
MIROUT
 = 2.5mA
4.4
mA
Diode Forward Current
I
DF
5
mA
Diode Forward Voltage
V
DF
I
DF
 = 100FA, T
A
 = +25NC
0.6
V
I
DF
 = 5mA, T
A
 = +25NC
1.25
MIROUT Current Limit
I
MIROUT
DS3920T-001 version, T
A
 = +25NC
10
20
40
mA
DS3920T-002 version, T
A
 = +25NC
2.8
4.4
8
MIROUT Series Resistance
R
AGC
(Note 1)
100
W
MIR to MIROUT Ratio
K
MIR
1FA to 2.5mA
0.190
0.200
0.210
A/A
I
MIROUT
 > 2.5mA
0.180
0.200
0.220
Power-Supply Rejection Ratio
(DI
MIR
/I
MIR
)
/DV
MIRIN
V
MIRIN
 = 3V (Note 2)
4800    15,000
ppm/V
V
MIRIN
 = 30V or 60V (Notes 2, 3)
100
500
MIR Current Rise Time
(20%/80%)
t
RC
(Note 4)
30
ns
Thermal Shutdown Temperature
T
SHDN
(Note 3)
+150
NC
Thermal Shutdown Hysteresis
T
HYST
(Note 3)
20
NC
相关PDF资料
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