参数资料
型号: DS4510U-5+
厂商: Maxim Integrated Products
文件页数: 11/12页
文件大小: 0K
描述: IC SUPERVISOR W/NV MEM 10-USOP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 1
类型: 简单复位/加电复位
监视电压数目: 1
输出: 开路漏极或开路集电极
复位: 低有效
复位超时: 可调节/可选择
电压 - 阀值: 4.625V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
供应商设备封装: 10-µMAX
包装: 管件
CPU Supervisor with Nonvolatile Memory and
Programmable I/O
dition, write the slave address (R/ W = 0), and the first
memory address of the next page before continuing to
write data.
Acknowledge Polling: Any time an EEPROM page is
written, the DS4510 requires the EEPROM write time
(t W ) after the stop condition to write the contents of the
page to EEPROM. During the EEPROM write time, the
DS4510 does not acknowledge its slave address
because it is busy. It is possible to take advantage of
that phenomenon by repeated addressing the DS4510,
which allows the next page to be written as soon as the
DS4510 is ready to receive the data. The alternative to
acknowledge polling is to wait for maximum period of
t W to elapse before attempting to write again to the
DS4510.
EEPROM Write Cycles: When EEPROM writes occur,
the DS4510 writes the whole EEPROM memory page
even if only a single byte on the page was modified.
Writes that do not modify all 8 bytes on the page are
allowed and do not corrupt the remaining bytes of
memory on the same page. Because the whole page is
written, bytes on the page that were not modified dur-
ing the transaction are still subject to a write cycle. This
can result in a whole page being worn out over time by
writing a single byte repeatedly. Writing a page one
byte at a time wears the EEPROM out eight times faster
than writing the entire page at once. The DS4510’s
EEPROM memory is guaranteed to handle 50,000 write
cycles at +70°C. Writing to SEEPROM memory with
SEE = 1 does not count as an EEPROM write cycle
when evaluating the EEPROM’s estimated lifetime.
Reading a Single Byte from a Slave: Unlike the write
operation that uses the memory address byte to define
where the data is to be written, the read operation
occurs at the present value of the memory address
counter. To read a single byte from the slave the mas-
ter generates a start condition, writes the slave address
with R/ W = 1, reads the data byte with a NACK to indi-
cate the end of the transfer, and generates a stop con-
dition.
Manipulating the Address Counter for Reads: A
dummy write cycle can be used to force the address
counter to a particular value. To do this the master gen-
erates a start condition, writes the slave address (R/ W
= 0), writes the memory address where it desires to
read, generates a repeated start condition, writes the
slave address (R/ W = 1), reads data with ACK or NACK
as applicable, and generates a stop condition.
See Figure 7 for a read example using the repeated
start condition dummy write cycle.
Reading Multiple Bytes from a Slave: The read oper-
ation can be used to read multiple bytes with a single
transfer. When reading bytes from the slave, the master
simply ACKs the data byte if it desires to read another
byte before terminating the transaction. After the mas-
ter reads the last byte it NACKs to indicate the end of
the transfer and generates a stop condition. This can
be done with or without modifying the address
counter’s location before the read cycle. The DS4510
does not wrap on page boundaries during read opera-
tions, but the counter rolls from its upper-most memory
address FFh to 00h if the last memory location is read
during the read transaction.
Example: The entire memory contents of the DS4510
can be read with a single transfer starting at address
F0h that reads 80 bytes of data. Addresses F0h to FFh
are read sequentially, the address counter rolls to 00h,
and then addresses 00h to 3Fh can be read sequential-
ly. This allows the entire memory contents to be read in
a single operation without reading the undefined con-
tents of the reserved area of the memory.
Application Information
Advantages of Using the SEE Bit to Disable
EEPROM Writes
The SEE bit allows EEPROM writes to be disabled for
the SRAM-shadowed EEPROM bytes, allowing the
SRAM of SEE registers to change without writing the
EEPROM to the same value. This prevents write opera-
tions from changing the power-on value of the I/O pins,
reduces the number of EEPROM write cycles, and
speeds up I/O operations because the DS4510 does
not require an internally timed EEPROM write cycle to
complete the operation.
Power-Supply Decoupling
To achieve the best results when using the DS4510,
decouple the power supply with a 0.01μF or a 0.1μF
capacitor. Use high-quality, ceramic, surface-mount
capacitors, and mount the capacitors as close as pos-
sible to the V CC and GND pins of the DS4510 to mini-
mize lead inductance.
SDA and SCL Pullup Resistors
SDA is an open-collector output on the DS4510 that
requires a pullup resistor to realize high logic levels.
Because the DS4510 does not utilize clock cycle
stretching, a master using either an open-collector out-
put with a pullup resistor or a normal output driver can
be utilized for SCL. Pullup resistor values should be
chosen to ensure that the rise and fall times listed in the
AC Electrical Characteristics are within specification.
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