参数资料
型号: DS5000FP-16
厂商: Maxim Integrated Products
文件页数: 19/22页
文件大小: 0K
描述: IC MODULE MICRO 16MHZ FLATPACK
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 66
系列: DS500x
核心处理器: 8051
芯体尺寸: 8-位
速度: 16MHz
连通性: EBI/EMI,SIO,UART/USART
外围设备: 电源故障复位,WDT
输入/输出数: 32
程序存储器类型: SRAM
RAM 容量: 128 x 8
电压 - 电源 (Vcc/Vdd): 4.75 V ~ 5.25 V
振荡器型: 外部
工作温度: 0°C ~ 70°C
封装/外壳: 80-BQFP
包装: 托盘
DS5000FP
6 of 22
INSTRUCTION SET
The DS5000FP executes an instruction set that is object code compatible with the industry standard 8051
microcontroller. As a result, software development packages such as assemblers and compilers that have
been written for the 8051 are compatible with the DS5000FP. A complete description of the instruction
set and operation are provided in the Secure Microcontroller User’s Guide.
Also note that the DS5000FP is embodied in the DS5000(T) and DS2250(T) modules. The DS5000(T)
combines the DS5000FP with one SRAM of either 8 or 32 kbytes and a lithium cell. An optional Real
Time Clock is also available in the DS5000T. This is packaged in a 40-pin DIP module. The DS2250(T)
is an identical function in a SIMM form factor. It also offers the option of a second 32k SRAM mapped
as data on Chip Enable 2.
MEMORY ORGANIZATION
Figure 2 illustrates the memory map accessed by the DS5000FP. The entire 64k of program and 64k of
data is available. The DS5000FP maps 32k of this space into the SRAM connected to the byte-wide bus.
This is the area from 0000h to 7FFFh (32k) and is reached via CE1 . Any area not mapped into the NV
RAM is reached via the Expanded bus on Ports 0 & 2. Selecting CE2 provides another 32k of potential
data storage. When CE2 is used, no data is available on the ports. The memory map is covered in detail in
the Secure Microcontroller User’s Guide.
Figure 3 illustrates a typical memory connection for a system using 8k bytes of SRAM. Figure 4 shows a
similar system with 32 kbytes. The byte-wide Address bus connects to the SRAM address lines. The bi-
directional byte-wide data bus connects the data I/O lines of the SRAM. CE1 provides the chip enable
and R/ W is the write enable. An additional RAM could be connected to CE2 , with common connections
for R/ W , BA14-0, and BD7-0.
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