参数资料
型号: DS5001FP-16N
厂商: Maxim Integrated Products
文件页数: 3/27页
文件大小: 0K
描述: IC MPU 128K 16MHZ IND 80-TQFP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 66
系列: DS500x
核心处理器: 8051
芯体尺寸: 8-位
速度: 16MHz
连通性: EBI/EMI,SIO,UART/USART
外围设备: 电源故障复位,WDT
输入/输出数: 32
程序存储器类型: SRAM
RAM 容量: 128 x 8
电压 - 电源 (Vcc/Vdd): 4.5 V ~ 5.5 V
振荡器型: 外部
工作温度: -40°C ~ 85°C
封装/外壳: 80-BQFP
包装: 托盘
DS5001FP
11 of 27
Figure 6. DS5001FP CONNECTION TO 64k x 8 SRAM
POWER MANAGEMENT
The DS5001FP monitors VCC to provide power-fail reset, early warning power-fail interrupt, and switch
over to lithium backup. It uses an internal bandgap reference in determining the switch points. These are
called VPFW, VCCMIN, and VLI, respectively. When VCC drops below VPFW, the DS5001FP performs an
interrupt vector to location 2Bh if the power-fail warning was enabled. Full processor operation continues
regardless. When power falls further to VCCMIN, the DS5001FP invokes a reset state. No further code
execution is performed unless power rises back above VCCMIN. All decoded chip enables and the R/ W
signal go to an inactive (logic 1) state. VCC is still the power source at this time. When VCC drops further
to below VLI, internal circuitry switches to the lithium cell for power. The majority of internal circuits are
disabled and the remaining nonvolatile states are retained. Any devices connected VCCO are powered by
the lithium cell at this time. VCCO is at the lithium battery voltage minus approximately 0.45V. This drop
varies depending on the load. Low power SRAMs should be used for this reason. When using the
DS5001FP, the user must select the appropriate battery to match the RAM data retention current and the
desired backup lifetime. Note that the lithium cell is only loaded when VCC < VLI. The User’s Guide has
more information on this topic. The trip points VCCMIN and VPFW are listed in the Electrical Specifications
section.
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