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参数资料
| 型号： | DS60X/T&R |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | IC SENSOR MICRO CENTIGRADE FCHIP |
| 标准包装： | 20,000 |
| 感应温度： | -40°C ~ 125°C |
| 输出类型： | 电压 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 精确度： | ±2°C |
| 封装/外壳： | 3-UFBGA，FCBGA |
| 供应商设备封装： | 3-覆晶式 |
| 包装： | 带卷 (TR) |
DS60
output that is capable of sourcing 125μA, which allows the DS60 to be switched to a zero power standby
state when the gate is forced to a logic 0.
ABSOLUTE MAXIMUM RATINGS*
Voltage on V DD
Output Current
Operating Temperature Range
Storage Temperature Range
ESD Susceptibility (Human Body Model)
Soldering Temperature
GND -0.3V to +6.5V
5.0mA
-40°C to +125°C
-55°C to +150°C
2kV
215°C for 60s (Vapor Phase)
220°C for 15s (IR)
* These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
The Dallas Semiconductor DS60 is built to the highest quality standards and manufactured for long-term
reliability. All Dallas Semiconductor devices are made using the same quality materials and
manufacturing methods. However, the DS60 is not exposed to environmental stresses, such as burn-in,
that some industrial applications require.
DC ELECTRICAL CHARACTERISTICS
(-40°C to +125°C; 2.7V ≤ V DD ≤ 5.5V)
PARAMETER
Supply Voltage
Supply Current
Measurement
Error
V O DC Offset
Sensor Gain
SYMBOL
V DD
I DD
T ERR
Δ V/ Δ T
CONDITION
0°C ≤ T A ≤ 85°C
-40°C ≤ T A ≤ 125°C
T = 0°C
MIN
2.7
6.0
TYP
80
424
6.25
MAX
5.5
125
±2
±3
6.5
UNITS
V
μA
°C
mV
mV/°C
NOTES
1
2
2
1, 2
2
Nonlinearity
±0.8
°C
2, 3
Power Supply
Regulation
2.7V ≤ V DD ≤ 3.3V
3.0V ≤ V DD ≤ 5.5V
±2.0
±0.25
mV/V
mV/V
Sensor Drift
Output Impedance
±0.25
800
°C
Ω
4
NOTES:
1)
2)
3)
4)
All voltages are referenced to ground unless otherwise specified.
Specified for V O sourcing 1.0μA (max).
Nonlinearity is the maximum deviation from an ideal linear slope.
Typical drift following three consecutive passes through a vapor phase process.
2 of 2
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