参数资料
型号: DSEE8-06CC
厂商: IXYS
文件页数: 1/2页
文件大小: 61K
描述: DIODE HFRED 600V 10A ISOPLUS220
标准包装: 50
系列: HiPerDynFRED™
电压 - 在 If 时为正向 (Vf)(最大): 1.75V @ 10A
电流 - 在 Vr 时反向漏电: 60µA @ 600V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 600V
反向恢复时间(trr): 30ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对串联
安装类型: 通孔,径向
封装/外壳: ISOPLUS220?
供应商设备封装: ISOPLUS220?
包装: 管件
HiPerDynFREDTM
Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
Notes: Data given for TVJ
= 25
OC and per diode unless otherwise specified
Diodes connected in series
Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse test: pulse Width = 300
μs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low cathode to tab capacitance (<15pF)
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
1 mA 2500 V~
≤Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low IRM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
IFAV
VRRM
= 600 V
trr
= 30 ns
= 10 A
VRRM
VRRM
Type
V V
600 300 DSEE8-06CC
Symbol
Conditions Maximum Ratings
IFRMS
IFAVM
IFRM
20 A
TC
= 110°C; rectangular, d = 0.5 10 A
tP
< 10 μs; rep. rating, pulse width limited by T
VJM
10 A
IFSM
TVJ
= 45°C; t
p
= 10 ms (50 Hz), sine 60 A
EAS
TVJ
= 25°C; non-repetitive 0.5 mJ
IAS
= 2 A; L = 180 μH
IAR
VA
= 1.5
·VR typ.; f = 10 kHz; repetitive 0.2 A
TVJ
TVJM
Tstg
-55...+175 °C
175 °C
-55...+150 °C
Ptot
TC
= 25°C 60 W
VISOL
50/60 Hz RMS; IISOL
FC
Mounting force 11...65 / 2.4...11 N / lb
Weight
typical 3 g
Symbol
Conditions Characteristic Values
typ.
max.
IR
TVJ
= 25°C V
R
= VRRM
TVJ
= 150°C V
R
= VRRM
60 μA
0.2 mA
VF
IF
= 10 A; T
VJ
= 125°C 1.3 V
TVJ
= 25°C 1.75 V
RthJC
RthCH
2.5 K/W
0.6 K/W
trr
IF
= 1 A; -di/dt = 50 A/μs; 30 ns
VR
= 30 V; T
VJ
= 25°C
IRM
VR
= 100 V; I
F
= 12 A; -di
F/dt = 100 A/μs 2 2.4 A
TVJ
= 100°C
98758 (12/00)
? 2000 IXYS All rights reserved
DSEE8-06CC
ADVANCE TECHNICAL INFORMATION
1 2 3
* Patent pending
ISOPLUS220TM
23
Isolated back surface *
1
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