参数资料
型号: DSEI2X61-12B
厂商: IXYS
文件页数: 1/2页
文件大小: 0K
描述: DIODE ARRAY 1200V 52A SOT227B
产品目录绘图: SOT-227, SOT-227B miniBLOC
标准包装: 10
系列: FRED
电压 - 在 If 时为正向 (Vf)(最大): 2.5V @ 60A
电流 - 在 Vr 时反向漏电: 2.2mA @ 1200V
电流 - 平均整流 (Io)(每个二极管): 52A
电压 - (Vr)(最大): 1200V(1.2kV)
反向恢复时间(trr): 60ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 2 个独立式
安装类型: 底座安装
封装/外壳: SOT-227-4,miniBLOC
供应商设备封装: SOT-227B
包装: 管件
其它名称: DSEI2X61-12B544
Fast Recovery
Epitaxial Diode (FRED)
DSEI 2x 61
I FAVM = 2x 52 A
V RRM = 1200 V
t rr
= 40 ns
V RSM
V
1200
V RRM
V
1200
Type
DSEI 2x 61-12B
miniBLOC, SOT-227 B
E72873
Symbol
Test Conditions
Maximum Ratings (per diode)
International standard package
I FRMS
I FAVM x
I FRM
T VJ = T VJM
T C = 50 ° C; rectangular, d = 0.5
t P < 10 m s; rep. rating, pulse width limited by T VJM
100
52
700
A
A
A
Features
q
I FSM
T VJ = 45 ° C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
500
A
A
q
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
T VJ = 150 ° C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
400
440
A
A
q
q
q
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
I 2 t
T VJ = 45 ° C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1000
1050
A 2 s
A 2 s
q
q
Extremely low switching losses
Low I RM -values
A s
T VJ = 150 ° C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
800
810
2
A 2 s
q
Soft recovery behaviour
Antiparallel diode for high frequency
Anti saturation diode
T VJ
T VJM
T stg
P tot
T C = 25 ° C
-40...+150
150
-40...+150
180
° C
° C
° C
W
Applications
q
switching devices
q
V ISOL
M d
Weight
50/60 Hz, RMS
I ISOL £ 1 mA
Mounting torque
Terminal connection torque (M4)
2500
1.5/13
1.5/13
30
V~
Nm/lb.in.
Nm/lb.in.
g
q
q
q
q
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Symbol
Test Conditions
Characteristic Values (per diode)
typ. max.
q
q
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
I R
V F
T VJ = 25 ° C
T VJ = 25 ° C
T VJ = 125 ° C
I F = 60 A;
V R = V RRM
V R = 0.8 ? V RRM
V R = 0.8 ? V RRM
T VJ = 150 ° C
T VJ = 25 ° C
2.2
0.5
14
2.15
2.50
mA
mA
mA
V
V
Advantages
q
q
protection circuits
V T0
r T
R thJC
R thCK
t rr
I RM
For power-loss calculations only
T VJ = T VJM
I F = 1 A; -di/dt = 200 A/ m s; V R = 30 V; T VJ = 25 ° C
V R = 540 V; I F = 60 A; -di F /dt = 480 A/ m s
L £ 0.05 m H; T VJ = 100 ° C
0.7
0.05
40
32
1.65
8.3
60
36
V
m W
K/W
K/W
ns
A
q
q
q
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
x I FAVM rating includes reverse blocking losses at T VJM , V R = 0.8 V RRM , duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
? 2000 IXYS All rights reserved
1-2
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