参数资料
型号: DSPIC30F1010T-30I/MM
厂商: Microchip Technology
文件页数: 17/66页
文件大小: 0K
描述: IC DSPIC MCU/DSP 6K 28QFN
产品培训模块: Asynchronous Stimulus
标准包装: 1,600
系列: dsPIC™ 30F
核心处理器: dsPIC
芯体尺寸: 16-位
速度: 30 MIP
连通性: I²C,IrDA,LIN,SPI,UART/USART
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 21
程序存储器容量: 6KB(2K x 24)
程序存储器类型: 闪存
RAM 容量: 256 x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 5.5 V
数据转换器: A/D 6x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 28-VQFN 裸露焊盘
包装: 带卷 (TR)
配用: DM300023-ND - KIT DEMO DSPICDEM SMPS BUCK
其它名称: DSPIC30F1010T-30I/MMTR
dsPIC30F Flash Programming Specification
DS70102K-page 24
2010 Microchip Technology Inc.
TABLE 8-1:
PROGRAMMING EXECUTIVE COMMAND SET
Opcode
Mnemonic
Length
(16-bit
words)
Time Out
Description
0x0
SCHECK
1
1 ms
Sanity check.
0x1
READD
4
1 ms/row Read N 16-bit words of data EEPROM, Configuration registers or
device ID starting from specified address.
0x2
READP
4
1 ms/row Read N 24-bit instruction words of code memory starting from
specified address.
0x3
Reserved
N/A
This command is reserved. It will return a NACK.
0x4
PROGD(2)
19
5 ms
Program one row of data EEPROM at the specified address, then
verify.
0x5
PROGP(1)
51
5 ms
Program one row of code memory at the specified address, then
verify.
0x6
PROGC
4
5 ms
Write byte or 16-bit word to specified Configuration register.
0x7
ERASEB
2
5 ms
Bulk Erase (entire code memory or data EEPROM), or erase by
segment.
0x8
ERASED(2)
3
5 ms/row Erase rows of data EEPROM from specified address.
0x9
ERASEP(1)
3
5 ms/row Erase rows of code memory from specified address.
0xA
QBLANK
3
300 ms
Query if the code memory and data EEPROM are blank.
0xB
QVER
1
1 ms
Query the programming executive software version.
Note 1: One row of code memory consists of (32) 24-bit words. Refer to Table 5-2 for device-specific information.
2: One row of data EEPROM consists of (16) 16-bit words. Refer to Table 5-3 for device-specific information.
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