参数资料
型号: DSPIC30F4013-20I/PT
厂商: Microchip Technology
文件页数: 101/153页
文件大小: 0K
描述: IC DSPIC MCU/DSP 48K 44TQFP
产品培训模块: Serial Communications using dsPIC30F CAN
Serial Communications using dsPIC30F I2C
Serial Communications using dsPIC30F SPI
Serial Communications using dsPIC30F UART
dsPIC30F 12 bit ADC - Part 2
dsPIC30F Addressing Modes - Part 1
dsPIC30F Architecture - Part 1
dsPIC30F DSP Engine & ALU
dsPIC30F Interrupts
dsPIC30F Motor Control PWM
dsPIC Timers
Asynchronous Stimulus
dsPIC30F Addressing Modes - Part 2
dsPIC30F Architecture - Part 2
dsPIC30F 12-bit ADC Part 1
标准包装: 160
系列: dsPIC™ 30F
核心处理器: dsPIC
芯体尺寸: 16-位
速度: 20 MIPS
连通性: CAN,I²C,SPI,UART/USART
外围设备: AC'97,欠压检测/复位,I²S,POR,PWM,WDT
输入/输出数: 30
程序存储器容量: 48KB(16K x 24)
程序存储器类型: 闪存
EEPROM 大小: 1K x 8
RAM 容量: 2K x 8
电压 - 电源 (Vcc/Vdd): 2.5 V ~ 5.5 V
数据转换器: A/D 13x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 44-TQFP
包装: 托盘
配用: XLT44PT3-ND - SOCKET TRAN ICE 44MQFP/TQFP
AC164305-ND - MODULE SKT FOR PM3 44TQFP
其它名称: DSPIC30F401320IPT
2010 Microchip Technology Inc.
DS70138G-page 51
dsPIC30F3014/4013
6.3
Writing to the Data EEPROM
To write an EEPROM data location, the following
sequence must be followed:
1.
Erase the data EEPROM word.
a)
Select the word, data EEPROM erase and
set the WREN bit in the NVMCON register.
b)
Write the address of word to be erased into
NVMADR.
c)
Enable the NVM interrupt (optional).
d)
Write 0x55 to NVMKEY.
e)
Write 0xAA to NVMKEY.
f)
Set the WR bit. This begins the erase cycle.
g)
Either poll the NVMIF bit or wait for the
NVMIF interrupt.
h)
The WR bit is cleared when the erase cycle
ends.
2.
Write the data word into data the EEPROM write
latches.
3.
Program 1 data word into the data EEPROM.
a)
Select the word, data EEPROM program and
set the WREN bit in the NVMCON register.
b)
Enable the NVM write done interrupt
(optional).
c)
Write 0x55 to NVMKEY.
d)
Write 0xAA to NVMKEY.
e)
Set the WR bit. This begins the program
cycle.
f)
Either poll the NVMIF bit or wait for the
NVM interrupt.
g)
The WR bit is cleared when the write cycle
ends.
The write does not initiate if the above sequence is not
exactly followed (write 0x55 to NVMKEY, write 0xAA to
NVMCON, then set WR bit) for each word. It is strongly
recommended that interrupts be disabled during this
code segment.
Additionally, the WREN bit in NVMCON must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM due to unexpected code exe-
cution. The WREN bit should be kept clear at all times
except when updating the EEPROM. The WREN bit is
not cleared by hardware.
After a write sequence has been initiated, clearing the
WREN bit does not affect the current write cycle. The
WR bit is inhibited from being set unless the WREN bit
is set. The WREN bit must be set on a previous instruc-
tion. Both WR and WREN cannot be set with the same
instruction.
At the completion of the write cycle, the WR bit is
cleared in hardware and the Nonvolatile Memory Write
Complete Interrupt Flag bit (NVMIF) is set. The user
may either enable this interrupt or poll this bit. NVMIF
must be cleared by software.
6.3.1
WRITING A WORD OF DATA
EEPROM
Once the user has erased the word to be programmed,
then a table write instruction is used to write one write
latch, as shown in Example 6-4.
6.3.2
WRITING A BLOCK OF DATA
EEPROM
To write a block of data EEPROM, write to all sixteen
latches first, then set the NVMCON register and
program the block, as shown in Example 6-5.
EXAMPLE 6-4:
DATA EEPROM WORD WRITE
; Point to data memory
MOV
#LOW_ADDR_WORD,W0
; Init pointer
MOV
#HIGH_ADDR_WORD,W1
MOV
W1,TBLPAG
MOV
#LOW(WORD),W2
; Get data
TBLWTL
W2,[ W0]
; Write data
; The NVMADR captures last table access address
; Select data EEPROM for 1 word op
MOV
#0x4004,W0
MOV
W0,NVMCON
; Operate key to allow write operation
DISI
#5
; Block all interrupts with priority <7 for
; next 5 instructions
MOV
#0x55,W0
MOV
W0,NVMKEY
; Write the 0x55 key
MOV
#0xAA,W1
MOV
W1,NVMKEY
; Write the 0xAA key
BSET
NVMCON,#WR
; Initiate program sequence
NOP
; Write cycle will complete in 2mS. CPU is not stalled for the Data Write Cycle
; User can poll WR bit, use NVMIF or Timer IRQ to determine write complete
相关PDF资料
PDF描述
DSPIC30F4013-30I/PT IC DSPIC MCU/DSP 48K 44TQFP
516-090-000-421 CONN RCPT 90POS RACK & PANEL
516-090-000-411 CONN RCPT 90POS RACK & PANEL
516-038-000-251 CONN RCPT 38POS RACK & PANEL
AT89C51RC2-RLRUL MCU 8051 32K FLASH 3V 44-VQFP
相关代理商/技术参数
参数描述
DSPIC30F4013-30I/ML 功能描述:数字信号处理器和控制器 - DSP, DSC General Purpose RoHS:否 制造商:Microchip Technology 核心:dsPIC 数据总线宽度:16 bit 程序存储器大小:16 KB 数据 RAM 大小:2 KB 最大时钟频率:40 MHz 可编程输入/输出端数量:35 定时器数量:3 设备每秒兆指令数:50 MIPs 工作电源电压:3.3 V 最大工作温度:+ 85 C 封装 / 箱体:TQFP-44 安装风格:SMD/SMT
DSPIC30F4013-30I/P 功能描述:数字信号处理器和控制器 - DSP, DSC General Purpose RoHS:否 制造商:Microchip Technology 核心:dsPIC 数据总线宽度:16 bit 程序存储器大小:16 KB 数据 RAM 大小:2 KB 最大时钟频率:40 MHz 可编程输入/输出端数量:35 定时器数量:3 设备每秒兆指令数:50 MIPs 工作电源电压:3.3 V 最大工作温度:+ 85 C 封装 / 箱体:TQFP-44 安装风格:SMD/SMT
DSPIC30F4013-30I/P 制造商:Microchip Technology Inc 功能描述:16BIT MCU-DSP 30MHZ 30F4013 DIP40
DSPIC30F4013-30I/PT 功能描述:数字信号处理器和控制器 - DSP, DSC General Purpose RoHS:否 制造商:Microchip Technology 核心:dsPIC 数据总线宽度:16 bit 程序存储器大小:16 KB 数据 RAM 大小:2 KB 最大时钟频率:40 MHz 可编程输入/输出端数量:35 定时器数量:3 设备每秒兆指令数:50 MIPs 工作电源电压:3.3 V 最大工作温度:+ 85 C 封装 / 箱体:TQFP-44 安装风格:SMD/SMT
DSPIC30F4013-30I/PT 制造商:Microchip Technology Inc 功能描述:DIGITAL SIGNAL CONTROLLER 16 BIT ((NW))