参数资料
型号: DSSK18-0025BS
厂商: IXYS
文件页数: 1/3页
文件大小: 87K
描述: DIODE SCHOTTKY 25V 10A TO-263AB
标准包装: 800
电压 - 在 If 时为正向 (Vf)(最大): 450mV @ 10A
电流 - 在 Vr 时反向漏电: 10mA @ 25V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 25V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263AB
包装: 管件
DSSK18-0025BS
preliminary
Schottky Diode
Symbol Definition
R a t i n g s
Features / Advantages:
Very low Vf
Extremely low switching losses
low Irm values
Improved thermal behaviour
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Conditions Unittyp. max.
IFSM
IR
A
V
140
IFAV
A
VF
0.45
RthJC
1.70
K/W
VR
=
1
2
3
min.
10
t = 10 ms
(50 Hz), sine
Applications:
Rectifiers in switch mode power
supplies (SMPS)
Free wheeling diode in low voltage
converters
VRRM
V
25
25V°C=
25
10
mA
TVJ
TVJ
=mA100
40
°C
Package:
Part number
VR
=
TVJ
=°C25
IF
=A10
V
TC
= 140°C
rectangular, d = 0.5
Ptot
75
W
TC
=
25
°C
TVJ
150
°C
-55
VRRM
=
IFAV
=
2x
25
V
10
A
TVJ
=45°C
DSSK18-0025BS
25V
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
0.56
TVJ
=25
°C
CJ
tbd pF
junction capacitance
V= V;R
tbd Tf = 1 MHz = °CVJ
25
VF0
V
0.20
TVJ
= 150°C
rF
14.6
V
0.37
TVJ
=°C125
IF
=A10
V
0.51
IF
=A20
IF
=A20
threshold voltage
slope resistance
for power loss calculation only
Backside: cathode
VF
=
0.37
V
Housing:
TO-263 (D2Pak)
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
IXYS reserves the right to change limits, conditions and dimensions.
? 2007 IXYS all rights reserved
20071119
Data according to IEC 60747and per diode unless otherwise specified
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