参数资料
型号: DTB133HK
厂商: Rohm CO.,LTD.
元件分类: 功率晶体管
英文描述: Digital Transistor(Built in Resistor)
中文描述: 数字晶体管(内置电阻)
文件页数: 1/1页
文件大小: 53K
代理商: DTB133HK
DTB133HK / DTB133HS
Transistors
Digital transistors (built-in resistors)
DTB133HK / DTB133HS
!
Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic
effects are almost completely eliminated.
3) Only the on/off conditions need to be set for operation, making
device design easy.
4) Higher mounting densities can be achieved.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CC
V
I
I
C
Pd
Tj
Tstg
Limits
50
20
6
500
200
300
150
55~150
DTB133HK
DTB133HS
Unit
V
V
mA
mW
°
C
°
C
Supply voltage
Input voltage
Output current
Power
Junction temperature
Storage temperature
!
External dimensions
(Units : mm)
(3) Collector(Drain)
(2) Base(Gate)
Each lead has same dimensions
0
0
0
0.3to0.6
1
(
(
2.8
1.6
0
(
2
1
0
ROHM : SMT3
EIAJ : SC-59
ROHM : SPT
EIAJ : SC-72
DTB133HK
DTB133HS
0.45
2.5
(1) (2) (3)
(3) Base
(1) Emitter
(
5
3
3
Taping specifications
0.45
0.5
4
2
!
Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTB133HK
SMT3
G98
T146
3000
DTB133HS
SPT
-
TP
5000
!
Circuit schematic
OUT
GND (+)
IN
R
1
R
2
OUT
IN
GND (+)
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Symbol
V
I(off)
V
I(on)
Min.
-
2
Typ.
-
-
Max.
0.3
-
Unit
Conditions
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
-
-
-
56
2.31
2.4
-
0.1
-
-
-
3.3
3
200
0.3
2.4
0.5
-
4.29
3.7
-
V
V
mA
μ
A
-
k
-
MHz
V
CC
=
5V , I
O
=
100
μ
A
V
O
=
0.3V , I
O
=
20mA
I
O
=
50mA , I
I
=
2.5mA
V
I
=
5V
V
CC
=
50V , V
I
= 0V
I
O
=
50mA , V
O
=
5V
V
CE
=
10V , I
E
= 5mA , f = 100MHz
-
-
Input voltage
Transition frequency of the device.
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
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