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参数资料
| 型号： | DTC125TSA |
| 厂商： | Rohm CO.,LTD. |
| 英文描述： | Digital transistor (built-in resistor) |
| 中文描述： | 数字晶体管（内置电阻） |
| 文件页数： | 1/1页 |
| 文件大小： | 55K |
| 代理商： | DTC125TSA |
DTC125TUA / DTC125TKA / DTC125TSA
Transistors
Digital transistor (built-in resistor)
DTC125TUA / DTC125TKA / DTC125TSA
!
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
200
300
150
55
～ +
150
DTC125TUA / DTC125TKA
DTC125TSA
Unit
V
V
V
mA
mW
°
C
°
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
Junction temperature
Storage temperature
!
Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTC125TUA
UMT3
0A
T106
3000
DTC125TKA
SMT3
0A
T146
3000
DTC125TSA
SPT
TP
5000
!
External dimensions
(Units : mm)
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
ROHM : SPT
EIAJ : SC-72
DTC125TSA
DTC125TKA
DTC125TUA
(3) Collector(Drain)
(1) Emitter(Source)
Each lead has same dimensions
1.25
2.1
0
0
0
0.1to0.4
(
0
0
0
0
(
2
1
(
0
(2) Base(Gate)
(3) Collector(Drain)
(1) Emitter(Source)
Each lead has same dimensions
0
0
0
0.3to0.6
1
(
(
2.8
1.6
0
(
2
1
0
0.45
2.5
(1) (2) (3)
(3) Base
(1) Emitter
(
5
3
3
Taping specifications
0.45
0.5
4
2
!
Electrical characteristics
(Ta = 25
°
C)
!
Circuit schematic
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
Min.
Typ.
250
200
Max.
0.5
0.5
0.3
600
260
Unit
V
V
V
μ
A
μ
A
V
k
Conditions
f
T
50
50
5
100
140
250
MHz
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
50V
V
EB
=
4V
I
C
=
0.5mA , I
B
=
0.05mA
I
C
=
1mA , V
CE
=
5V
V
CE
=
10V , I
E
=
-
5mA , f
=
100MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Transition frequency
Transition frequency of the device.
C
B
E
R
1
E : Emitter
C : Collector
B : Base
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DTC125TU | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 |
| DTC125TUA | 制造商:ROHM 制造商全称:Rohm 功能描述:Digital transistor (built-in resistor) |
| DTC125TUA_09 | 制造商:ROHM 制造商全称:Rohm 功能描述:100mA / 50V Digital transistor (with built-in resistor) |
| DTC125TUAT106 | 功能描述:开关晶体管 - 偏压电阻器 NPN 50V 100MA RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| DTC125TV | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP |
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