参数资料
型号: DTC343TS
厂商: Rohm CO.,LTD.
英文描述: Digital transistors (built-in resistor)
中文描述: 数字晶体管(内置电阻)
文件页数: 1/3页
文件大小: 63K
代理商: DTC343TS
DTC343TK / DTC343TS
Transistors
Digital transistors (built-in resistor)
Rev.A
1/2
DTC343TK / DTC343TS
z
Features
In addition to the features of regular digital transistors,
1) Low V
CE(sat)
makes these transistors ideal for muting
circuits. (Typ. 0.04V at I
C
/I
B
=50/2.5mA)
2) They can be used at high current. (I
CMax
. =600mA)
z
Absolute maximum ratings
(Ta=25
°
C)
z
Circuit schematic
C
B
E
R
1
E : Emitter
C : Collector
B : Base
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
30
15
5
600
200
300
150
DTC343TK
DTC343TS
55 to
+
150
Unit
V
V
V
mA
mW
Collector power
dissipation
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
C
C
z
Package, marking, and packaging specifications
Part No.
DTC343TK
SMT3
H03
T146
3000
DTC343TS
SPT
TP
5000
Package
Marking
Packaging code
Basic ordering unit (pieces)
z
External characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
Min.
30
15
5
100
3.29
Typ.
40
250
4.7
Max.
0.5
0.5
80
600
6.11
Unit
V
V
V
μ
A
μ
A
mV
k
Conditions
200
0.95
MHz
I
C
=
50
μ
A
I
C
=
1mA
I
E
=
50
μ
A
V
CB
=
20V
V
EB
=
4V
I
C
=
50mA , I
B
=
2.5mA
I
C
=
50mA , V
CE
=
5V
V
CE
=
10V , I
E
=
50mA , f
=
100MHz
V
I
=
7V , R
=
1k
, f
=
1kHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Transition frequency
Output on resistance
Transition frequency of the device.
f
T
Ron
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